PartNumber | BFU710F,115 | BFU710F | BFU710F115 |
Description | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | |
Manufacturer | NXP | NXP | - |
Product Category | RF Bipolar Transistors | RF Transistors (BJT) | - |
RoHS | Y | - | - |
Transistor Type | Bipolar | - | - |
Technology | SiGe | - | - |
DC Collector/Base Gain hfe Min | 200 | - | - |
Collector Emitter Voltage VCEO Max | 2.8 V | - | - |
Emitter Base Voltage VEBO | 1 V | - | - |
Continuous Collector Current | 10 mA | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-343 | - | - |
Packaging | Reel | - | - |
Operating Frequency | 110 GHz | - | - |
Type | RF Silicon Germanium | - | - |
Brand | NXP Semiconductors | - | - |
Pd Power Dissipation | 136 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 934064613115 | - | - |
Unit Weight | 0.000235 oz | - | - |