BFU730F,115

Mfr. #:: BFU730F,115
Manufacturer:: NXP Semiconductors
Description:: RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lifecycle:: New from this manufacturer.
Datasheet:: BFU730F,115 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BFU730F,115 Datasheet BFU730F,115 Datasheet (P4-P6)BFU730F,115 Datasheet (P7-P9)BFU730F,115 Datasheet (P10-P12)
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More Information:: BFU730F,115 more Information BFU730F,115 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF Bipolar Transistors

RoHS:: Y

Transistor Type:: Bipolar

Technology:: SiGe

DC Collector/Base Gain hfe Min:: 205

Collector- Emitter Voltage VCEO Max:: 2.8 V

Emitter- Base Voltage VEBO:: 1 V

Continuous Collector Current:: 5 mA

Mounting Style:: SMD/SMT

Package / Case:: SOT343F-4

Packaging:: Reel

Collector- Base Voltage VCBO:: 10 V

DC Current Gain hFE Max:: 555

Height:: 0.75 mm

Length:: 2.2 mm

Operating Frequency:: 55 GHz

Type:: RF Silicon Germanium

Width:: 1.35 mm

Brand:: NXP Semiconductors

Pd - Power Dissipation:: 197 mW

Product Type:: RF Bipolar Transistors

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 934064614115

Unit Weight:: 0.000235 oz

Tags: BFU730F,1, BFU730F, BFU73, BFU7, BFU

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFU730F,115 Description

***ical: Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:55GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 55GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 55GHz; Power Dissipation Pd: 197mW; DC Collector Current: 5mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Silicon Germanium, NPN

***ical: Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R

***enic: 2.8V 220mW 25mA 330@10mA,2V 45GHz NPN +150¡æ@(Tj) SOT-343F Bipolar Transistors - BJT ROHS

***ure Electronics: BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:45GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 220mW; DC Collector Current: 70mA; DC Current Gain hFE: 155hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: BFU730LX Series 3 V 30 mA NPN Wideband Silicon Germanium RF Transistor - SOT-883

***icontronic: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Silicon, NPN

***ark: Trans Gp Bjt Npn 3V 0.03A 3-Pin Dfn_C T/r Rohs Compliant: Yes

***nell: RF TRANSISTOR, NPN, 3V, 53GHZ, SOT883C; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 3V; Transition Frequency ft: 53GHz; Power Dissipation Pd: 160mW; DC Collector Current: 30mA; DC Current Gain hFE: 205hFE; RF Transistor Case: SOT-883C; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU710 Series NPN 5.5 V 10 mA Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:43GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 43GHz; Power Dissipation Pd: 136mW; DC Collector Current: 2mA; DC Current Gain hFE: 200hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: DTC144EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:47Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:-; No. Of Pins:3 Pin Rohs Compliant: Yes

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC144E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 68hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 68; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: DTC124EM Series 50 V 100 mA Surface Mount NPN Digital Transistor - VMT-3

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin VMT T/R

***nell: DIGITAL TRANS, 50V, 0.1A, SOT-723; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-723; No. of Pins: 3 Pin; Product Range: DTC124E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC124EKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin SMT T/R

***ark: Transistor Digital Sc-59 100Ma Npn; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:22Kohm; Base-Emitter Resistor R2:22Kohm; Resistor Rohs Compliant: Yes

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BFU730F,115

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes