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BFU730F,115

P1-P3P4-P6P7-P9P10-P12
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.8 dB at 5.8 GHz
High maximum power gain 18.5 dB at 5.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Low noise amplifiers for microwave communications systems
Ka band oscillators DRO’s
Low current battery equipped applications
Microwave driver / buffer applications
Wi-Fi / WLAN / WiMAX
GPS
RKE
AMR
ZigBee
LTE, cellular, UMTS
SDARS first stage LNA
FM radio
Mobile TV
Bluetooth
BFU730F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
BFU730F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 2 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
[1] T
sp
is the temperature at the solder point of the emitter lead.
[2] G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
3. Ordering information
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CBO
collector-base voltage open emitter - - 10 V
V
CEO
collector-emitter voltage open base - - 2.8 V
V
EBO
emitter-base voltage open collector - - 1.0 V
I
C
collector current - 5 30 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
- - 197 mW
h
FE
DC current gain I
C
=2mA; V
CE
=2V;
T
j
=25°C
205 380 555
C
CBS
collector-base
capacitance
V
CB
=2V; f=1MHz - 55 - fF
f
T
transition frequency I
C
=25mA; V
CE
=2V;
f=2GHz; T
amb
=25°C
-55- GHz
G
p(max)
maximum power gain I
C
=17mA; V
CE
=2V;
f = 12 GHz; T
amb
=25°C
[2]
- 12.5 - dB
NF noise figure I
C
=5mA; V
CE
=2V;
f = 12 GHz; Γ
S
= Γ
opt
-1.30- dB
P
L(1dB)
output power at 1 dB
gain compression
I
C
=15mA; V
CE
=2.5V;
Z
S
=Z
L
=50Ω;
f=5.8GHz; T
amb
=25°C
- 12.5 - dBm
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
12
34
mbb15
9
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU730F - plastic surface-mounted flat pack package; reverse
pinning; 4 leads
SOT343F
BFU730F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 3 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
4. Marking
5. Limiting values
[1] T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 4. Marking
Type number Marking Description
BFU730F D6* * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 10 V
V
CEO
collector-emitter voltage open base - 2.8 V
V
EBO
emitter-base voltage open collector - 1.0 V
I
C
collector current - 30 mA
P
tot
total power dissipation T
sp
≤ 90 °C
[1]
- 197 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point 304 K/W
Fig 1. Power derating curve
T
sp
(°C)
0 16012040 80
001aam852
100
150
50
200
250
P
tot
(mW)
0
P1-P3P4-P6P7-P9P10-P12

BFU730F,115

Mfr. #:
Buy BFU730F,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Lifecycle:
New from this manufacturer.
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