BFU730F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 29 April 2011 4 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base breakdown voltage I
C
=2.5μA; I
E
=0mA 10 - - V
V
(BR)CEO
collector-emitter breakdown voltage I
C
=1mA; I
B
=0mA 2.8 - - V
I
C
collector current - 5 30 mA
I
CBO
collector-base cut-off current I
E
=0mA; V
CB
=4.5V - - 100 nA
h
FE
DC current gain I
C
=2mA; V
CE
= 2 V 205 380 555
C
CES
collector-emitter capacitance V
CB
= 2 V; f = 1 MHz - 206 - fF
C
EBS
emitter-base capacitance V
EB
= 0.5 V; f = 1 MHz - 442 - fF
C
CBS
collector-base capacitance V
CB
= 2 V; f = 1 MHz - 55 - fF
f
T
transition frequency I
C
=25mA; V
CE
=2V; f=2GHz;
T
amb
=25°C
-55- GHz
G
p(max)
maximum power gain I
C
=17mA; V
CE
=2V; T
amb
=25°C
[1]
f = 1.5 GHz - 29 - dB
f = 1.8 GHz - 28 - dB
f = 2.4 GHz - 26.5 - dB
f = 5.8 GHz - 18.5 - dB
f = 12 GHz - 12.5 - dB
|s
21
|
2
insertion power gain I
C
=17mA; V
CE
=2V; T
amb
=25°C
f = 1.5 GHz - 27 - dB
f = 1.8 GHz - 25.5 - dB
f = 2.4 GHz - 23.5 - dB
f = 5.8 GHz - 16 - dB
f = 12 GHz - 10.5 - dB
NF noise figure I
C
=5mA; V
CE
=2V; Γ
S
= Γ
opt
;
T
amb
=25°C
f = 1.5 GHz - 0.50 - dB
f = 1.8 GHz - 0.50 - dB
f = 2.4 GHz - 0.55 - dB
f = 5.8 GHz - 0.80 - dB
f = 12 GHz - 1.30 - dB
G
ass
associated gain I
C
=5mA; V
CE
=2V; Γ
S
= Γ
opt
;
T
amb
=25°C
f = 1.5 GHz - 25.0 - dB
f = 1.8 GHz - 23.5 - dB
f = 2.4 GHz - 21.5 - dB
f = 5.8 GHz - 15.0 - dB
f = 12 GHz - 11.0 - dB
