BFU730F,1

BFU730F,115 vs BFU730F,115-CUT TAPE

 
PartNumberBFU730F,115BFU730F,115-CUT TAPE
DescriptionRF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
ManufacturerNXP-
Product CategoryRF Bipolar Transistors-
RoHSY-
Transistor TypeBipolar-
TechnologySiGe-
DC Collector/Base Gain hfe Min205-
Collector Emitter Voltage VCEO Max2.8 V-
Emitter Base Voltage VEBO1 V-
Continuous Collector Current5 mA-
Mounting StyleSMD/SMT-
Package / CaseSOT343F-4-
PackagingReel-
Collector Base Voltage VCBO10 V-
DC Current Gain hFE Max555-
Height0.75 mm-
Length2.2 mm-
Operating Frequency55 GHz-
TypeRF Silicon Germanium-
Width1.35 mm-
BrandNXP Semiconductors-
Pd Power Dissipation197 mW-
Product TypeRF Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # Aliases934064614115-
Unit Weight0.000235 oz-
Manufacturer Part # Description RFQ
NXP Semiconductors
NXP Semiconductors
BFU730F,115 RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
BFU730F,115-CUT TAPE New and Original
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