 |  | | |
| PartNumber | BSC016N03MS G | BSC016N03MS | BSC016N03MSG |
| Description | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | LNFINEON | |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Rds On Drain Source Resistance | 1.6 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3M | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 42 ns | - | - |
| Typical Turn On Delay Time | 31 ns | - | - |
| Part # Aliases | BSC016N03MSGATMA1 BSC16N3MSGXT SP000311502 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N03MS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M | |
| BSC016N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
Infineon Technologies |
BSC016N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSC016N03MS | Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 | ||
| BSC016N03MS G | Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R (Alt: BSC016N03MS G) | ||
| BSC016N03MSG | Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC016N03MSGXT | New and Original |