PartNumber | BSC0702LSATMA1 | BSC070N10NS3 G | BSC070N10LS5ATMA1 |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 | MOSFET TRENCH >=100V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSC0702LS SP001589462 | BSC070N10NS3GATMA1 BSC7N1NS3GXT SP000778082 | BSC070N10LS5 SP001861044 |
Technology | - | Si | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | TDSON-8 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Id Continuous Drain Current | - | 90 A | - |
Rds On Drain Source Resistance | - | 6.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 55 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 114 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Height | - | 1.27 mm | - |
Length | - | 5.9 mm | - |
Series | - | OptiMOS 3 | BSC070N10 |
Transistor Type | - | 1 N-Channel | - |
Width | - | 5.15 mm | - |
Forward Transconductance Min | - | 36 S | - |
Fall Time | - | 8 ns | - |
Rise Time | - | 10 ns | - |
Typical Turn Off Delay Time | - | 29 ns | - |
Typical Turn On Delay Time | - | 15 ns | - |
Unit Weight | - | 0.003527 oz | - |