BSC070N10NS3GATMA1

Mfr. #:: BSC070N10NS3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC070N10NS3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 7 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 42 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 114 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 36 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 29 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: BSC070N10NS3 BSC7N1NS3GXT G SP000778082

Unit Weight:: 0.010582 oz

Tags: BSC070N10NS3, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSC070N10NS3GATMA1 Description

***ure Electronics: N-Channel 100 V 7 mOhm OptiMOS3 Power-Transistor - PG-TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; On Resistance Rds(On):0.0063Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***icroelectronics: N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-2 package

***r Electronics: Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) H2PAK T/R

*** Electronic Components: MOSFET N-Ch 100V 6mOhm 110A STripFET VII

***icroelectronics SCT: Power MOSFETs, 100V, 110A, H2PAK-2, Tape and Reel

***S: French Electronic Distributor since 1988

***el Electronic: CAP CERAMIC DISK RDL LONG LEADS

***ical: Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R

***emi: Power MOSFET, 100V, 6.9mΩ, 100A, N-Channel

***r Electronics: Power Field-Effect Transistor

***el Electronic: RES SMD 30.9 OHM 1% 1W 2512

***ure Electronics: Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114

***icroelectronics: N-channel 100 V, 0.0065 Ohm, 16 A PowerFLAT(TM) 5x6 STripFET(TM) III Power MOSFET

***et: Trans MOSFET N-CH 100V 82A 8-Pin Power Flat T/R

*** Electronic Components: MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS

***i-Key: MOSFET N CH 100V 82A PWRFLAT 5X6

***r Electronics: Power Field-Effect Transistor, 58A I(D), 100V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ark: Mosfet Transistor, N Channel, 75 A, 100 V, 7.2 Mohm, 10 V, 4 V

***ure Electronics: Single N-Channel 100 V 9 mOhm 83 nC HEXFET® Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH 100V 97A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 97A D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***(Formerly Allied Electronics): MOSFET; N Ch.; 100V; 97A; 9 MOHM; 83 NCQG; D2-PAK; Pb-Free

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 230 W

***el Electronic: Fixed LDO Voltage Regulator, 2.5V to 5.5V, 210mV Dropout, 3.3Vout, 1Aout, TSSOP-16

***nell: MOSFET, N, 100V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissi

*** Stop Electro: Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: Single N-Channel 100 V 9 mOhm 101 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 100V 13A 8-Pin PQFN EP T/R / MOSFET N-CH 100V 13A 8-PQFN

***(Formerly Allied Electronics): MOSFET, 100V, 100A, 9.0 mOhm, 65 nC Qg,PQFN 5x6

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 100V, 13A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

Market price

Part #	Mfg.	Description	Stock	Price
BSC070N10NS3GATMA1 DISTI # V72:2272_06383503	Infineon Technologies AG	Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4188	3000:$0.6068 1000:$0.6130 500:$0.7507 250:$0.8361 100:$0.8454 25:$1.0488 10:$1.0616 1:$1.2038
BSC070N10NS3GATMA1 DISTI # BSC070N10NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.7037
BSC070N10NS3GATMA1 DISTI # BSC070N10NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8175 500:$1.0354 100:$1.3352 10:$1.6890 1:$1.9100
BSC070N10NS3GATMA1 DISTI # BSC070N10NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 90A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8175 500:$1.0354 100:$1.3352 10:$1.6890 1:$1.9100
BSC070N10NS3GATMA1 DISTI # 31308611	Infineon Technologies AG	Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4188	12:$1.2038
BSC070N10NS3GATMA1 DISTI # BSC070N10NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 90A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC070N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.5539 10000:$0.5339 20000:$0.5149 30000:$0.4969 50000:$0.4879
BSC070N10NS3GATMA1 DISTI # 47Y7995	Infineon Technologies AG	MOSFET Transistor, N Channel, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V RoHS Compliant: Yes	0	1:$1.5800 10:$1.3500 25:$1.2500 50:$1.1400 100:$1.0400 250:$0.9770 500:$0.9140 1000:$0.7220
BSC070N10NS3GATMA1. DISTI # 27AC1074	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.5540 10000:$0.5340 20000:$0.5150 30000:$0.4970 50000:$0.4880
BSC070N10NS3 G DISTI # 726-BSC070N10NS3G	Infineon Technologies AG	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 RoHS: Compliant	208	1:$1.5800 10:$1.3500 100:$1.0400 500:$0.9140 1000:$0.7220
BSC070N10NS3GATMA1 DISTI # 726-BSC070N10NS3GATM	Infineon Technologies AG	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 RoHS: Compliant	197	1:$1.5800 10:$1.3500 100:$1.0400 500:$0.9140 1000:$0.7220
BSC070N10NS3GATMA1 DISTI # 9064359P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 90A OPTIMOS TDSON, RL	4750	50:£0.8650 250:£0.7530 500:£0.6610 1250:£0.5220
BSC070N10NS3GATMA1 DISTI # 2443421	Infineon Technologies AG	MOSFET, N CH, 100V, 90A, TDSON-8 RoHS: Compliant	7454	5:£0.9400 25:£0.8490 100:£0.6620 250:£0.6050 500:£0.5470
BSC070N10NS3GATMA1 DISTI # C1S322000595923	Infineon Technologies AG	Trans MOSFET N-CH 100V 90A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	4688	10:$1.0693
BSC070N10NS3GATMA1 DISTI # 2443421	Infineon Technologies AG	MOSFET, N CH, 100V, 90A, TDSON-8 RoHS: Compliant	7172	1:$2.5000 10:$2.1400 100:$1.6500 500:$1.4500 1000:$1.1500 5000:$1.1400

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BSC070N10NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes