BSC076N06

BSC076N06NS3 G vs BSC076N06NS3 vs BSC076N06NS3G

 
PartNumberBSC076N06NS3 GBSC076N06NS3BSC076N06NS3G
DescriptionMOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G)
ManufacturerInfineonINFINEONINF
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge50 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSC076N06NS3GATMA1 BSC76N6NS3GXT SP000453656--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC076N06NS3 G MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC076N06NS3GATMA1 MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
BSC076N06NS3GATMA1 MOSFET N-CH 60V 50A TDSON-8
BSC076N06NS3 New and Original
BSC076N06NS3 G Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP
BSC076N06NS3G Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP (Alt: BSC076N06NS3 G)
BSC076N06NS3GATMA1 , TDA New and Original
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