BSC079N03L

BSC079N03LSC G vs BSC079N03LS vs BSC079N03LSC

 
PartNumberBSC079N03LSC GBSC079N03LSBSC079N03LSC
DescriptionMOSFET N-Ch 30V 14A TDSON-8
ManufacturerInfineonInfineon Technologies
Product CategoryMOSFETIC ChipsTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTDSON-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance7.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle-Single Quad Drain Triple Source
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height1.27 mm--
Length5.9 mm--
SeriesBSC079N03-BSC079N03
Transistor Type1 N-Channel-1 N-Channel
Width5.15 mm--
BrandInfineon Technologies--
Fall Time2.4 ns-2.4 ns
Product TypeMOSFET--
Rise Time2.4 ns-2.4 ns
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns-14 ns
Typical Turn On Delay Time3 ns-3 ns
Part # AliasesBSC079N03LSCGATMA1 BSC79N3LSCGXT SP000527424--
Part Aliases--BSC079N03LSCGATMA1 BSC079N03LSCGXT SP000527424
Package Case--TDSON-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--7.9 mOhms
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC079N03LSC G MOSFET N-Ch 30V 14A TDSON-8
BSC079N03LSCGATMA1 MOSFET N-CH 30V 14A 8TDSON
Infineon Technologies
Infineon Technologies
BSC079N03LSCGATMA1 MOSFET LV POWER MOS
BSC079N03LSCGXT Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N03LSCGATMA1)
BSC079N03LS New and Original
BSC079N03LSC New and Original
BSC079N03LSG New and Original
BSC079N03LSCG MOSFET, N-CH, 30V, 50A, TDSON
BSC079N03LSC G RF Bipolar Transistors MOSFET N-Ch 30V 14A TDSON-8
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