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| PartNumber | BSC0911NDATMA1 | BSC0911ND | BSC0911ND 0911ND |
| Description | MOSFET N-Ch 25V 40A TISON-8 | MOSFET N-Ch 25V 40A TISON-8 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TISON-8 | TISON-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
| Id Continuous Drain Current | 40 A | 40 A | - |
| Rds On Drain Source Resistance | 3.7 mOhms, 1.3 mOhms | 2.5 mOhms, 900 uOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 3 nC, 8.8 nC | 12 nC, 37 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 2.5 W | - |
| Configuration | Dual | Dual | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 77 S, 130 S | 38 S, 65 S | - |
| Fall Time | 2.2 ns, 4 ns | 2.2 ns, 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.8 ns, 5.4 ns | 2.8 ns, 5.4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns, 25 ns | 15 ns, 25 ns | - |
| Typical Turn On Delay Time | 3.3 ns, 3.8 ns | 3.3 ns, 3.8 ns | - |
| Part # Aliases | BSC0911ND BSC911NDXT SP000934746 | BSC0911NDATMA1 BSC911NDXT SP000934746 | - |
| Channel Mode | - | Enhancement | - |