BSC0911

BSC0911NDATMA1 vs BSC0911ND vs BSC0911ND 0911ND

 
PartNumberBSC0911NDATMA1BSC0911NDBSC0911ND 0911ND
DescriptionMOSFET N-Ch 25V 40A TISON-8MOSFET N-Ch 25V 40A TISON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTISON-8TISON-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance3.7 mOhms, 1.3 mOhms2.5 mOhms, 900 uOhms-
Vgs th Gate Source Threshold Voltage1.6 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge3 nC, 8.8 nC12 nC, 37 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationDualDual-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type2 N-Channel2 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min77 S, 130 S38 S, 65 S-
Fall Time2.2 ns, 4 ns2.2 ns, 4 ns-
Product TypeMOSFETMOSFET-
Rise Time2.8 ns, 5.4 ns2.8 ns, 5.4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns, 25 ns15 ns, 25 ns-
Typical Turn On Delay Time3.3 ns, 3.8 ns3.3 ns, 3.8 ns-
Part # AliasesBSC0911ND BSC911NDXT SP000934746BSC0911NDATMA1 BSC911NDXT SP000934746-
Channel Mode-Enhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC0911NDATMA1 MOSFET N-Ch 25V 40A TISON-8
BSC0911ND MOSFET N-Ch 25V 40A TISON-8
BSC0911NDATMA1 MOSFET 2N-CH 25V 18A/30A TISON-8
BSC0911ND Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R (Alt: BSC0911ND)
BSC0911ND 0911ND New and Original
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