PartNumber | BSC190N12NS3 G | BSC190N12NS3GATMA1 | BSC190N12NS3G |
Description | MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3 | MOSFET MV POWER MOS | |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 120 V | - | - |
Id Continuous Drain Current | 44 A | - | - |
Rds On Drain Source Resistance | 19 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 26 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 69 W | - | - |
Configuration | Single | - | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 45 S, 23 S | - | - |
Fall Time | 4 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 16 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 22 ns | - | - |
Typical Turn On Delay Time | 17 ns | - | - |
Part # Aliases | BSC190N12NS3GATMA1 BSC19N12NS3GXT SP000652752 | BSC190N12NS3 BSC19N12NS3GXT G SP000652752 | - |