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BSC190N12NS3 G

BSC190N12NS3 G
Mfr. #:
BSC190N12NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC190N12NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSC190N12NS3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Id - Continuous Drain Current:
44 A
Rds On - Drain-Source Resistance:
19 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
26 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Type:
OptiMOS 3 Power-Transistor
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
45 S, 23 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
16 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
22 ns
Typical Turn-On Delay Time:
17 ns
Part # Aliases:
BSC190N12NS3GATMA1 BSC19N12NS3GXT SP000652752
Tags
BSC190N12, BSC190N1, BSC190, BSC19, BSC1, BSC
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
BSC190N12NS3GATMA1
DISTI # V72:2272_06384232		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		63
  • 100:$1.0810
  • 25:$1.2373
  • 10:$1.3234
  • 1:$1.4602
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6818
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7920
  • 500:$1.0032
  • 100:$1.2935
  • 10:$1.6370
  • 1:$1.8500
BSC190N12NS3GATMA1
DISTI # BSC190N12NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 44A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7920
  • 500:$1.0032
  • 100:$1.2935
  • 10:$1.6370
  • 1:$1.8500
BSC190N12NS3GATMA1
DISTI # 30729211		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		63
  • 100:$1.0791
  • 25:$1.2353
  • 10:$1.3218
BSC190N12NS3 G
DISTI # BSC190N12NS3 G		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A 8-Pin TDSON T/R (Alt: BSC190N12NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC190N12NS3GXT
    DISTI # BSC190N12NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 120V 8.6A 8-Pin TDSON EP - Tape and Reel (Alt: BSC190N12NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.6709
    • 10000:$0.6469
    • 20000:$0.6229
    • 30000:$0.6019
    • 50000:$0.5919
    BSC190N12NS3GATMA1
    DISTI # 50AC4329    		Infineon Technologies AGTRANS MOSFET N-CH 120V 8.6A AUTOMOTIVE 8-PIN TDSON EP T/R50
    • 1:$1.5700
    • 100:$1.2600
    • 250:$1.1400
    • 500:$1.0500
    • 1000:$0.9710
    BSC190N12NS3GATMA1
    DISTI # 13AC8341    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0166ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes478
    • 1:$2.0400
    • 10:$1.8000
    • 25:$1.6700
    • 50:$1.5500
    • 100:$1.4200
    • 250:$1.2700
    • 500:$1.1000
    • 1000:$0.8710
    BSC190N12NS3 G
    DISTI # 726-BSC190N12NS3GXT    		Infineon Technologies AGMOSFET N-Ch 120V 44A TDSON-8 OptiMOS 3
    RoHS: Compliant    		0
    • 1:$1.5300
    • 10:$1.3100
    • 100:$1.0100
    • 500:$0.8860
    • 1000:$0.6990
    BSC190N12NS3GATMA1
    DISTI # C1S322000595871    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		63
    • 25:$1.2373
    • 10:$1.3234
    BSC190N12NS3GATMA1
    DISTI # 2725816    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON
    RoHS: Compliant    		733
    • 5:£1.7700
    • 25:£1.6300
    • 100:£1.2900
    BSC190N12NS3GATMA1
    DISTI # 2725816    		Infineon Technologies AGMOSFET, N-CH, 120V, 44A, TDSON
    RoHS: Compliant    		478
    • 1:$2.9600
    • 10:$2.6100
    • 100:$2.0700
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    Availability
    Stock:
    Available
    On Order:
    4000
    Enter Quantity:
    Current price of BSC190N12NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $1.52
    $1.52
    10
    $1.30
    $13.00
    100
    $1.00
    $100.00
    500
    $0.89
    $443.00
    1000
    $0.70
    $699.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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