PartNumber | BSC22DN20NS3GATMA1 | BSC22DN20NS3 G | BSC22DN20NS3G |
Description | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 7 A | 7 A | - |
Rds On Drain Source Resistance | 194 mOhms | 194 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 5.6 nC | 5.6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 34 W | 34 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | BSC22DN20 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 3.5 S | 3.5 S | - |
Fall Time | 3 ns | 3 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4 ns | 4 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 6 ns | 6 ns | - |
Typical Turn On Delay Time | 4 ns | 4 ns | - |
Part # Aliases | BSC22DN20NS3 BSC22DN2NS3GXT G SP000781778 | BSC22DN20NS3GATMA1 BSC22DN2NS3GXT SP000781778 | - |
Part Aliases | - | - | BSC22DN20NS3 BSC22DN20NS3GXT G SP000781778 |
Package Case | - | - | TDSON-8 |