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BSC22DN20NS3 G

BSC22DN20NS3 G
Mfr. #:
BSC22DN20NS3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC22DN20NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
194 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
5.6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
34 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
3.5 S
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
6 ns
Typical Turn-On Delay Time:
4 ns
Part # Aliases:
BSC22DN20NS3GATMA1 BSC22DN2NS3GXT SP000781778
Tags
BSC22D, BSC22, BSC2, BSC
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC22DN20NS3GATMA1
DISTI # V72:2272_06384494		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R
RoHS: Compliant		1
  • 1:$0.7803
BSC22DN20NS3GATMA1
DISTI # BSC22DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2634In Stock
  • 1000:$0.4840
  • 500:$0.6131
  • 100:$0.7906
  • 10:$1.0000
  • 1:$1.1300
BSC22DN20NS3GATMA1
DISTI # BSC22DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2634In Stock
  • 1000:$0.4840
  • 500:$0.6131
  • 100:$0.7906
  • 10:$1.0000
  • 1:$1.1300
BSC22DN20NS3GATMA1
DISTI # BSC22DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4167
BSC22DN20NS3 G
DISTI # BSC22DN20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R (Alt: BSC22DN20NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC22DN20NS3GATMA1
    DISTI # BSC22DN20NS3GATMA1    		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC22DN20NS3GATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.3709
    • 10000:$0.3699
    • 20000:$0.3689
    • 30000:$0.3679
    • 50000:$0.3669
    BSC22DN20NS3GATMA1
    DISTI # 50Y1815    		Infineon Technologies AGMOSFET, N-CH, 200V, 7A, 150DEG C, 34W,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.194ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.0300
    • 10:$0.8780
    • 25:$0.8100
    • 50:$0.7430
    • 100:$0.6740
    • 250:$0.6360
    • 500:$0.5960
    • 1000:$0.4710
    BSC22DN20NS3 G
    DISTI # 726-BSC22DN20NS3G    		Infineon Technologies AGMOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
    RoHS: Compliant    		84
    • 1:$0.9400
    • 10:$0.7980
    • 100:$0.6130
    • 500:$0.5420
    • 1000:$0.4280
    • 5000:$0.3790
    BSC22DN20NS3GATMA1
    DISTI # 726-BSC22DN20NS3GATM    		Infineon Technologies AGMOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
    RoHS: Compliant    		1146
    • 1:$0.9400
    • 10:$0.7980
    • 100:$0.6130
    • 500:$0.5420
    • 1000:$0.4280
    • 5000:$0.3790
    BSC22DN20NS3GATMA1
    DISTI # 8259146P    		Infineon Technologies AGMOSFET N-CH 7A 200V OPTIMOS3 TDSON8EP, RL4980
    • 500:£0.5260
    • 1000:£0.4180
    • 2500:£0.4020
    • 5000:£0.3920
    BSC22DN20NS3GATMA1
    DISTI # 2480749    		Infineon Technologies AGMOSFET, N-CH, 200V, 7A, TDSON-8
    RoHS: Compliant    		913
    • 5:£0.6590
    • 25:£0.6350
    • 100:£0.4890
    • 250:£0.4600
    • 500:£0.4310
    BSC22DN20NS3GATMA1
    DISTI # 2480749RL    		Infineon Technologies AGMOSFET, N-CH, 200V, 7A, TDSON-8
    RoHS: Compliant    		0
    • 1:$1.5000
    • 10:$1.2600
    • 100:$0.9710
    • 500:$0.8580
    • 1000:$0.6780
    • 5000:$0.6000
    BSC22DN20NS3GATMA1
    DISTI # 2480749    		Infineon Technologies AGMOSFET, N-CH, 200V, 7A, TDSON-8
    RoHS: Compliant    		863
    • 1:$1.5000
    • 10:$1.2600
    • 100:$0.9710
    • 500:$0.8580
    • 1000:$0.6780
    • 5000:$0.6000
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    Availability
    Stock:
    Available
    On Order:
    1988
    Enter Quantity:
    Current price of BSC22DN20NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.93
    $0.93
    10
    $0.80
    $7.98
    100
    $0.61
    $61.30
    500
    $0.54
    $271.00
    1000
    $0.43
    $428.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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