BSC265N10LSF stock, BSC265N10LSF, BSC265N10LSF G


PartNumber	BSC265N10LSF G	BSC265N10LSFGATMA1
Description	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TDSON-8	TDSON-8
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	100 V	100 V
Id Continuous Drain Current	40 A	40 A
Rds On Drain Source Resistance	20 mOhms	20 mOhms
Vgs th Gate Source Threshold Voltage	1.2 V	1.2 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	21 nC	21 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	78 W	78 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	1.27 mm	1.27 mm
Length	5.9 mm	5.9 mm
Series	OptiMOS 2	OptiMOS 2
Transistor Type	1 N-Channel	1 N-Channel
Width	5.15 mm	5.15 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	21 S	21 S
Fall Time	4 ns	4 ns
Product Type	MOSFET	MOSFET
Rise Time	24 ns	24 ns
Factory Pack Quantity	5000	5000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	20 ns	20 ns
Typical Turn On Delay Time	10 ns	10 ns
Part # Aliases	BSC265N10LSFGATMA1 BSC265N1LSFGXT SP000379618	BSC265N10LSF BSC265N1LSFGXT G SP000379618
Unit Weight	0.003527 oz	0.004258 oz

Search Part Number : "BSC265N10LSF", Match & Start with "BSC265N10LSF" - Total : 6

Manufacturer	Part #	Description
Infineon Technologies	BSC265N10LSF G	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
	BSC265N10LSFGATMA1	MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
	BSC265N10LSFGATMA1	MOSFET N-CH 100V 40A TDSON-8
	BSC265N10LSF G	IGBT Transistors MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
	BSC265N10LSF	New and Original
	BSC265N10LSFG	Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON T/R (Alt: BSC265N10LSF G)

BSC265N10LSF