 |  | | |
| PartNumber | BSC520N15NS3 G | BSC520N15NS3 | BSC520N15NS3G |
| Description | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEO | INFINEON |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 21 A | - | - |
| Rds On Drain Source Resistance | 52 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 8.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 57 W | - | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 21 S, 11 S | - | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | 4 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | 10 ns | - |
| Typical Turn On Delay Time | 7 ns | 7 ns | - |
| Part # Aliases | BSC520N15NS3GATMA1 BSC52N15NS3GXT SP000521716 | - | - |
| Unit Weight | 0.007055 oz | - | - |
| Part Aliases | - | BSC520N15NS3GATMA1 BSC520N15NS3GXT SP000521716 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 57 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 21 A | - |
| Vds Drain Source Breakdown Voltage | - | 150 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 52 mOhms | - |
| Qg Gate Charge | - | 8.7 nC | - |
| Forward Transconductance Min | - | 21 S 11 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC520N15NS3 G | MOSFET N-Ch 150V 21A TDSON-8 OptiMOS 3 | |
| BSC520N15NS3GATMA1 | MOSFET N-CH 150V 21A TDSON-8 | ||
Infineon Technologies |
BSC520N15NS3GATMA1 | MOSFET MV POWER MOS | |
| BSC520N15NS3 | New and Original | ||
| BSC520N15NS3 G | Trans MOSFET N-CH 150V 21A 8-Pin TDSON T/R (Alt: BSC520N15NS3 G) | ||
| BSC520N15NS3G | New and Original |