BSC600N25NS3G

BSC600N25NS3GATMA1 vs BSC600N25NS3G vs BSC600N25NS3GS

 
PartNumberBSC600N25NS3GATMA1BSC600N25NS3GBSC600N25NS3GS
DescriptionMOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance50 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min25 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time22 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesBSC600N25NS3 BSC6N25NS3GXT G SP000676402--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC600N25NS3GATMA1 MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
BSC600N25NS3GATMA1 MOSFET N-CH 250V 25A TDSON-8
BSC600N25NS3G POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 250V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC600N25NS3GS New and Original
Top