BSC600N25NS3GATMA1

Mfr. #:: BSC600N25NS3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSC600N25NS3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 250 V

Id - Continuous Drain Current:: 25 A

Rds On - Drain-Source Resistance:: 50 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 29 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 25 S

Fall Time:: 8 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 22 ns

Typical Turn-On Delay Time:: 10 ns

Part # Aliases:: BSC600N25NS3 BSC6N25NS3GXT G SP000676402

Tags: BSC600N25NS3G, BSC600N25NS3, BSC600N, BSC60, BSC6, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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BSC600N25NS3GATMA1 Description

***ark: MOSFET Transistor, N Channel, 25 A, 250 V, 0.05 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 250 V 60 mOhm 22 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 250V 25A Automotive 8-Pin TDSON EP T/R

***ment14 APAC: MOSFET, N CH, 250V, 25A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***nell: MOSFET, N CH, 250V, 25A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***icroelectronics: N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET

***ure Electronics: N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK

*** Source Electronics: Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 30A D2PAK

***ark: N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes

***p One Stop: Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:250V; On Resistance

***ineon: Infineon's 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS comliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest Power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***nell: MOSFET, N CH, 250V, 25A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 136W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R

***i-Key: BUZ30 - SIPMOS POWER TRANSISTOR

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

***ure Electronics: Single N-Channel 200 V 0.051 Ohm 48 nC HEXFET® Power Mosfet - DirectFET®

***ineon: Target Applications: Battery Operated Drive; Class D Audio; Load Switch High Side

***ernational Rectifier: A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes optimized with low on resistance for applications such as active ORýing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***icroelectronics: N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET

***ical: Trans MOSFET N-CH 200V 30A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 200 V 0.075 Ohm 65 nC 150 W Silicon SMT Mosfet - TO-263-3

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK

***ure Electronics: FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3

***ical: Trans MOSFET N-CH 200V 31A 3-Pin (2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:D2-PAK; Power Dissipation Pd:180W; Power Dissipation on 1 Sq. PCB:3.13W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

Part #	Mfg.	Description	Stock	Price
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.4342
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.6157 500:$1.9158 100:$2.3659 10:$2.8850 1:$3.2300
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 25A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.6157 500:$1.9158 100:$2.3659 10:$2.8850 1:$3.2300
BSC600N25NS3GATMA1 DISTI # BSC600N25NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC600N25NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.3900 10000:$1.3900 20000:$1.2900 30000:$1.2900 50000:$1.1900
BSC600N25NS3GATMA1 DISTI # SP000676402	Infineon Technologies AG	Trans MOSFET N-CH 250V 25A 8-Pin TDSON T/R (Alt: SP000676402) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€1.6900 10000:€1.3900 20000:€1.2900 30000:€1.1900 50000:€1.0900
BSC600N25NS3GATMA1 DISTI # 79X1338	Infineon Technologies AG	MOSFET, N-CH, 250V, 25A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$2.8300 10:$2.4000 25:$2.2900 50:$2.1900 100:$2.0800 250:$1.9800 500:$1.7800 1000:$1.5000
BSC600N25NS3 G DISTI # 726-BSC600N25NS3GXT	Infineon Technologies AG	MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 RoHS: Compliant	99	1:$2.8300 10:$2.4000 100:$2.0800 250:$1.9800 500:$1.7800 1000:$1.5000 2500:$1.4200 5000:$1.3700
BSC600N25NS3GATMA1 DISTI # 726-BSC600N25NS3GATM	Infineon Technologies AG	MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.7000 10:$2.3000 100:$1.9900 250:$1.8900 500:$1.7000 1000:$1.4300 2500:$1.3600
BSC600N25NS3GATMA1 DISTI # 9064303P	Infineon Technologies AG	MOSFET N-CH 250V 25A OPTIMOS TDSON8 EP, RL	20	25:£1.8320 125:£1.4700 250:£1.3760 625:£1.2840
BSC600N25NS3GATMA1 DISTI # 2432713	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:$4.4800 10:$3.8100 100:$3.2900
BSC600N25NS3GATMA1 DISTI # 2432713RL	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:$4.4800 10:$3.8100 100:$3.2900
BSC600N25NS3GATMA1 DISTI # 2432713	Infineon Technologies AG	MOSFET, N CH, 250V, 25A, TDSON-8 RoHS: Compliant	0	1:£2.3700 10:£1.8600 100:£1.5000 250:£1.4100 500:£1.3100

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BSC600N25NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes