 | | |
| PartNumber | BSC883N03LS G | BSC883N03LSGATMA1 |
| Description | MOSFET N-Ch 34V 98A TDSON-8 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 34 V | - |
| Id Continuous Drain Current | 98 A | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | BSC883N03 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 4 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4.4 ns | - |
| Factory Pack Quantity | 5000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | - |
| Typical Turn On Delay Time | 6.4 ns | - |
| Part # Aliases | BSC883N03LSGATMA1 BSC883N3LSGXT SP000507422 | BSC883N03LS BSC883N3LSGXT G SP000507422 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC883N03LS G | MOSFET N-Ch 34V 98A TDSON-8 | |
| BSC883N03LSGATMA1 | MOSFET N-CH 34V 17A TDSON-8 | ||
| BSC883N03LS G | RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 | ||
Infineon Technologies |
BSC883N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSC883N03LSGXT | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) | ||
| BSC883N03LSGATMA1 , TDZF | New and Original | ||
| BSC883N03LS | New and Original | ||
| BSC883N03LSG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |