BSD2

BSD214SNH6327XTSA1 vs BSD214SN H6327 vs BSD214SN L6327

 
PartNumberBSD214SNH6327XTSA1BSD214SN H6327BSD214SN L6327
DescriptionMOSFET SMALL SIGNAL+P-CHMOSFET SMALL SIGNAL+P-CHIGBT Transistors MOSFET N-Ch 20V 1.5A SOT-363-6
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current1.5 A1.5 A-
Rds On Drain Source Resistance111 mOhms111 mOhms-
Vgs th Gate Source Threshold Voltage700 mV700 mV-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge800 pC800 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
SeriesBSD214BSD214-
Transistor Type1 N-Channel1 N-Channel-
Width1.25 mm1.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min4 S4 S-
Fall Time1.4 ns1.4 ns-
Product TypeMOSFETMOSFET-
Rise Time7.8 ns7.8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6.8 ns6.8 ns-
Typical Turn On Delay Time4.1 ns4.1 ns-
Part # AliasesBSD214SN BSD214SNH6327XT H6327 SP000917656BSD214SNH6327XT BSD214SNH6327XTSA1 SP000917656-
Unit Weight0.000265 oz0.000265 oz-
Development Kit---
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSD235CH6327XT MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD223P H6327 MOSFET P-Ch
BSD223PH6327XTSA1 MOSFET P-Ch DPAK-2
BSD235CH6327XTSA1 MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235NH6327XT MOSFET N-Ch 20V 950mA SOT-363-6
BSD235N H6327 MOSFET N-Ch 20V 950mA SOT-363-6
BSD235C H6327 MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235NH6327XTSA1 MOSFET N-Ch 20V 950mA SOT-363-6
BSD214SNH6327XTSA1 MOSFET SMALL SIGNAL+P-CH
BSD214SN H6327 MOSFET SMALL SIGNAL+P-CH
BSD214SNH6327XTSA1 MOSFET N-CH 20V 1.5A SOT363
BSD223P MOSFET 2P-CH 20V 0.39A SOT363
BSD223P L6327 MOSFET 2P-CH 20V 0.39A SOT363
BSD223PH6327XTSA1 MOSFET 2P-CH 20V 0.39A SOT363
BSD235C L6327 MOSFET N/P-CH 20V SOT-363
BSD235CH6327XTSA1 MOSFET N/P-CH 20V SOT363
BSD235N L6327 MOSFET 2N-CH 20V 0.95A SOT363
BSD214SN L6327 IGBT Transistors MOSFET N-Ch 20V 1.5A SOT-363-6
Infineon Technologies
Infineon Technologies
BSD235C L6327 MOSFET N and P-Ch 20V 950mA SOT-363-6
BSD223P L6327 MOSFET P-Ch -20V 390mA SOT-363-6
BSD235N L6327 MOSFET N-Ch 20V 950mA SOT-363-6
BSD20 New and Original
BSD201-B2-03LRHE6327 New and Original
BSD212 New and Original
BSD213 New and Original
BSD214 INSTOCK
BSD214SN New and Original
BSD214SN H6327 MOSFET SMALL SIGNAL+P-CH
BSD214SNH6327 - Bulk (Alt: BSD214SNH6327)
BSD214SNL6327 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSD215 New and Original
BSD22 New and Original
BSD223P E6327 New and Original
BSD223P H6327 MOSFET P-Ch
BSD223P Q67042 New and Original
BSD223P6327 New and Original
BSD223PH6327 Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSD223PH6327. New and Original
BSD223PL6327 INSTOCK
BSD235 New and Original
BSD235C New and Original
BSD235C H6327 Trans MOSFET N/P-CH 20V 0.95A/0.53A 6-Pin SOT-363 T/R (Alt: BSD235C H6327)
BSD235CH6327 New and Original
BSD235CH6327XT MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6
BSD235CL6327 New and Original
BSD235N New and Original
BSD235N H6327 Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: BSD235N H6327)
BSD235NH6327 New and Original
BSD223PH6327XTSA1-CUT TAPE New and Original
BSD235NH6327XT IGBT Transistors MOSFET N-Ch 20V 950mA SOT-363-6
Top