BSD235NH6327XT

Mfr. #:: BSD235NH6327XT
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 20V 950mA SOT-363-6
Lifecycle:: New from this manufacturer.
Datasheet:: BSD235NH6327XT Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: BSD235NH6327XT more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-363-6

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 950 mA

Rds On - Drain-Source Resistance:: 266 mOhms, 266 mOhms

Vgs th - Gate-Source Threshold Voltage:: 700 mV

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 320 pC, 320 pC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 500 mW (1/2 W)

Configuration:: Dual

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 0.9 mm

Length:: 2 mm

Series:: BSD235

Transistor Type:: 2 N-Channel

Width:: 1.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 2 S, 2 S

Fall Time:: 1.2 ns, 1.2 ns

Product Type:: MOSFET

Rise Time:: 3.6 ns, 3.6 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 4.5 ns, 4.5 ns

Typical Turn-On Delay Time:: 3.8 ns, 3.8 ns

Part # Aliases:: BSD235NH6327 BSD235NH6327XTSA1 SP000917652

Unit Weight:: 0.000265 oz

Tags: BSD235NH, BSD235N, BSD23, BSD2, BSD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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BSD235NH6327XT Description

***i-Key: MOSFET 2N-CH 20V 0.95A SOT363

*** Electronic Components: MOSFET N-Ch 20V 950mA SOT-363-6

***et Japan: Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R

***ure Electronics: DMN3190LDW: 30 V 190 mOhm Dual N-Channel Enhancement Mode Mosfet - SOT-363

*** Source Electronics: Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 1A SOT363

***ark: MOSFET, DUAL N-CH, 30V, 1A, SOT363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:1A; Continuous Drain Current Id P Channel:1A RoHS Compliant: Yes

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363 Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~150°C TJ 190m Ω @ 1.3A, 10V 2.8V @ 250μA MOSFET 2N-CH 30V 1A SOT363

***nell: MOSFET, DUAL N-CH, 30V, 1A, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 320mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***et: Transistor MOSFET Array Dual N-CH 30V 1300mA 6-Pin SOT-363 T/R

***ure Electronics: Dual N-Channel 30 V 190 mOhm Enhancement Mode Mosfet - SOT-363

***(Formerly Allied Electronics): MOSFET Dual N-Ch 30V 1A Enhanc. SOT363

***des Inc SCT: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ark: Mosfet, Dual, N-Ch, 30V, 1A Rohs Compliant: Yes

***p One Stop Global: Trans MOSFET N/P-CH 20V 1.066A/0.845A Automotive 6-Pin SOT-363 T/R

***ure Electronics: Dual N & P-Channel 20 V 450 mOhm Enhancement Mode Mosfet

***ment14 APAC: MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity:N and Complement; Continuous Drain Current Id:845mA; Source Voltage Vds:20V; On

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 1.066A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N & P CH, 20V, SOT-363; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 845mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection

***-Wing Technology: Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 4nC @ 4.5V 775mA 270mW 23ns

***et: Transistor MOSFET Array Dual P-CH 8V 0.775A 6-Pin SC-88 T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.775A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:-4.5V ;RoHS Compliant: Yes

***emi: Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection

***ser: MOSFETs- Power and Small Signal 8V Dual P-Channel No-Cancel/No-Return

***ponent Stockers USA: 775 mA 8 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2P-CH 8V 0.775A SOT-363

***emi: Small Signal MOSFET 8V 775mA 300 mOhm Dual P-Channel SC−88/SC70−6/SOT−363 with ESD Protection

***ser: MOSFETs- Power and Small Signal 8V Dual P-Channel ESD Protection

***r Electronics: Small Signal Field-Effect Transistor, 0.775A I(D), 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

***i-Key: MOSFET 2P-CH 8V 0.775A SOT-363

BSD235NH6327XT More Information

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSD235NH6327XTSA1 DISTI # BSD235NH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 0.95A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	270In Stock	1000:$0.1341 500:$0.1749 100:$0.2496 10:$0.3590 1:$0.4500
BSD235NH6327XTSA1 DISTI # BSD235NH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 0.95A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	270In Stock	1000:$0.1341 500:$0.1749 100:$0.2496 10:$0.3590 1:$0.4500
BSD235NH6327XTSA1 DISTI # BSD235NH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 0.95A SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1203
BSD235NH6327XTSA1 DISTI # SP000917652	Infineon Technologies AG	Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R (Alt: SP000917652) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 15000	3000:€0.1019 6000:€0.0789 12000:€0.0639 18000:€0.0539 30000:€0.0509
BSD235NH6327XTSA1 DISTI # BSD235NH6327XTSA1	Infineon Technologies AG	Trans MOSFET N-CH 20V 0.95A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD235NH6327XTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0689 15000:$0.0659 24000:$0.0639 45000:$0.0619 90000:$0.0599
BSD235NH6327XTSA1 DISTI # 46AC0522	Infineon Technologies AG	MOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:950mA,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.266ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage RoHS Compliant: Yes	0	1000:$0.1080 500:$0.1200 250:$0.1320 100:$0.1440 50:$0.1850 25:$0.2250 10:$0.2660 1:$0.3500
BSD235NH6327XTSA1 DISTI # 726-BSD235NH6327XTS	Infineon Technologies AG	MOSFET N-Ch 20V 950mA SOT-363-6 RoHS: Compliant	18443	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 3000:$0.0930
BSD235NH6327XT DISTI # 726-BSD235NH6327XTSA	Infineon Technologies AG	MOSFET N-Ch 20V 950mA SOT-363-6 RoHS: Compliant	8008	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 3000:$0.0930
BSD235N H6327 DISTI # 726-BSD235NH6327	Infineon Technologies AG	MOSFET N-Ch 20V 950mA SOT-363-6 RoHS: Compliant	0	1:$0.3700 10:$0.2800 100:$0.1600 1000:$0.1200 3000:$0.1000
BSD235NH6327XTSA1 DISTI # 8270115	Infineon Technologies AG	INFINEON TRANS BSD235NH6327XT, RL	9000	6000:£0.0640 3000:£0.0670 1000:£0.0780 250:£0.1060
BSD235NH6327XTSA1 DISTI # 2443477	Infineon Technologies AG	MOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6 RoHS: Compliant	0	3000:$0.1590 1000:$0.1910 100:$0.2540 10:$0.4440 1:$0.5860
BSD235NH6327XTSA1 DISTI # 2443477	Infineon Technologies AG	MOSFET, DUAL N CH, 20V, 0.95A, SOT-363-6 RoHS: Compliant	0	100:£0.1450 25:£0.2840 5:£0.2950
BSD235NH6327XTSA1 DISTI # XSKDRABS0029373	Infineon Technologies AG	RoHS: Compliant	12000	12000:$0.0779 9000:$0.0834

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Availability

Stock:: 12
On Order:: 1995
Enter Quantity:

Current price of BSD235NH6327XT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.34~~; ~~$0.34~~

10: ~~$0.27~~; ~~$2.66~~

100: ~~$0.14~~; ~~$14.40~~

1000: ~~$0.11~~; ~~$108.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

BSD235NH 4
BSD235N 7
BSD23 15
BSD2 43
BSD 186

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BSD235NH6327XT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes