PartNumber | BSD235NH6327XT | BSD235NH6327XTSA1 | BSD235NH6327 |
Description | MOSFET N-Ch 20V 950mA SOT-363-6 | MOSFET N-Ch 20V 950mA SOT-363-6 | |
Manufacturer | Infineon | Infineon | INFINEON |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 950 mA | 950 mA | - |
Rds On Drain Source Resistance | 266 mOhms, 266 mOhms | 266 mOhms, 266 mOhms | - |
Vgs th Gate Source Threshold Voltage | 700 mV | 700 mV | - |
Vgs Gate Source Voltage | 12 V | 12 V | - |
Qg Gate Charge | 320 pC, 320 pC | 320 pC, 320 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | - |
Height | 0.9 mm | 0.9 mm | - |
Length | 2 mm | 2 mm | - |
Series | BSD235 | - | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 1.25 mm | 1.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 2 S, 2 S | 2 S, 2 S | - |
Fall Time | 1.2 ns, 1.2 ns | 1.2 ns, 1.2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.6 ns, 3.6 ns | 3.6 ns, 3.6 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 4.5 ns, 4.5 ns | 4.5 ns, 4.5 ns | - |
Typical Turn On Delay Time | 3.8 ns, 3.8 ns | 3.8 ns, 3.8 ns | - |
Part # Aliases | BSD235NH6327 BSD235NH6327XTSA1 SP000917652 | BSD235N H6327 SP000917652 | - |
Unit Weight | 0.000265 oz | 0.000265 oz | - |