 | |  | |
| PartNumber | BSD223P H6327 | BSD223P L6327 | BSD223P |
| Description | MOSFET P-Ch | MOSFET P-Ch -20V 390mA SOT-363-6 | MOSFET 2P-CH 20V 0.39A SOT363 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 390 mA | 390 mA | - |
| Rds On Drain Source Resistance | 700 mOhms | 1.2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | - 620 pC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Digi-ReelR |
| Height | 0.9 mm | 0.9 mm | - |
| Length | 2 mm | 2 mm | - |
| Series | BSD223 | BSD223 | OptiMOS |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 1.25 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 350 mS | - | - |
| Development Kit | - | - | - |
| Fall Time | 3.2 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5.1 ns | 5.1 ns | - |
| Typical Turn On Delay Time | 3.8 ns | 3.8 ns | - |
| Part # Aliases | BSD223PH6327XT BSD223PH6327XTSA1 SP000924074 | BSD223PL6327HTSA1 SP000245417 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Product | - | MOSFET Small Signal | - |
| Package Case | - | - | 6-VSSOP, SC-88, SOT-363 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-SOT363-6 |
| FET Type | - | - | 2 P-Channel (Dual) |
| Power Max | - | - | 250mW |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 56pF @ 15V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 390mA |
| Rds On Max Id Vgs | - | - | 1.2 Ohm @ 390mA, 4.5V |
| Vgs th Max Id | - | - | 1.2V @ 1.5μA |
| Gate Charge Qg Vgs | - | - | 0.62nC @ 4.5V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD223P H6327 | MOSFET P-Ch | |
| BSD223PH6327XTSA1 | MOSFET P-Ch DPAK-2 | ||
| BSD223P | MOSFET 2P-CH 20V 0.39A SOT363 | ||
| BSD223P L6327 | MOSFET 2P-CH 20V 0.39A SOT363 | ||
| BSD223PH6327XTSA1 | MOSFET 2P-CH 20V 0.39A SOT363 | ||
Infineon Technologies |
BSD223P L6327 | MOSFET P-Ch -20V 390mA SOT-363-6 | |
| BSD22 | New and Original | ||
| BSD223P E6327 | New and Original | ||
| BSD223P H6327 | MOSFET P-Ch | ||
| BSD223P Q67042 | New and Original | ||
| BSD223P6327 | New and Original | ||
| BSD223PH6327 | Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSD223PH6327. | New and Original | ||
| BSD223PL6327 | INSTOCK | ||
| BSD223PH6327XTSA1-CUT TAPE | New and Original |