 |  | |
| PartNumber | BSL308PEH6327XTSA1 | BSL308PEH6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | -30V,-2A,Dual P-Channel Power MOSFET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSOP-6 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 2 A | - |
| Rds On Drain Source Resistance | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - 1.2 nC, - 1.2 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Transistor Type | 1 P-Channel | - |
| Width | 1.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 4.6 S, 4.6 S | - |
| Fall Time | 2.8 ns, 2.8 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 7.7 ns, 7.7 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 15.3 ns, 15.3 ns | - |
| Typical Turn On Delay Time | 5.6 ns, 5.6 ns | - |
| Part # Aliases | BSL308PE H6327 SP001101004 | - |
| Unit Weight | 0.000526 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL308PEH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL308PEH6327XTSA1 | MOSFET 2P-CH 30V 2A 6TSOP | ||
| BSL308PEH6327 | -30V,-2A,Dual P-Channel Power MOSFET |