BSM25GP

BSM25GP120 vs BSM25GP120-B2 vs BSM25GP120B2

 
PartNumberBSM25GP120BSM25GP120-B2BSM25GP120B2
DescriptionIGBT Modules 1200V 25A PIM
ManufacturerInfineonEUPEC-
Product CategoryIGBT ModulesModule-
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationArray 7--
Collector Emitter Voltage VCEO Max1600 V--
Collector Emitter Saturation Voltage2.55 V--
Continuous Collector Current at 25 C45 A--
Gate Emitter Leakage Current300 nA--
Pd Power Dissipation230 W--
Package / CaseEconoPIM2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height17 mm--
Length107.5 mm--
Width45 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM25GP120BOSA1 SP000095940--
Unit Weight6.349313 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSM25GP120 IGBT Modules 1200V 25A PIM
BSM25GP120BOSA1 45 A, 1200 V, N-CHANNEL IGBT
BSM25GP120-B2 New and Original
BSM25GP120B2 New and Original
BSM25GP120DN2 New and Original
BSM25GP60 New and Original
BSM25GP120 IGBT Modules 1200V 25A PIM
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