BSP

BSP316PH6327XTSA1 vs BSP317P H6327 vs BSP316PL6327HTSA1

 
PartNumberBSP316PH6327XTSA1BSP317P H6327BSP316PL6327HTSA1
DescriptionMOSFET P-Ch -100V -680mA SOT-223-3MOSFET P-Ch -250V -430mA SOT-223-3MOSFET P-CH 100V 0.68A SOT-223
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage100 V250 V-
Id Continuous Drain Current680 mA430 mA-
Rds On Drain Source Resistance1.4 Ohms3 Ohms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge- 6.4 nC- 15.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W1.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm1.6 mm-
Length6.5 mm6.5 mm-
SeriesBSP316BSP317-
Transistor Type1 P-Channel1 P-Channel-
Width3.5 mm3.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min500 mS380 mS-
Fall Time25.9 ns67 ns-
Product TypeMOSFETMOSFET-
Rise Time7.5 ns11.1 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time67.4 ns254 ns-
Typical Turn On Delay Time4.7 ns5.7 ns-
Part # AliasesBSP316P H6327 SP001058754BSP317PH6327XTSA1 SP001058758-
Unit Weight0.003951 oz0.003951 oz-
  • Start with
  • BSP 1035
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSP318S H6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318SH6327XTSA1 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP317PH6327XTSA1 MOSFET P-Ch -250V -430mA SOT-223-3
BSP320S H6327 MOSFET N-Ch 60V 2.9A SOT-223-3
BSP317P H6327 MOSFET P-Ch -250V -430mA SOT-223-3
BSP320S H6327 MOSFET N-Ch 60V 2.9A SOT-223-3
BSP316PH6327XTSA1 MOSFET P-CH 100V 0.68A SOT223
BSP316PL6327HTSA1 MOSFET P-CH 100V 0.68A SOT-223
BSP317PH6327XTSA1 MOSFET P-CH 250V 0.43A SOT223
BSP317PL6327HTSA1 MOSFET P-CH 250V 0.43A SOT-223
BSP318S E6327 MOSFET N-CH 60V 2.6A SOT-223
BSP318S H6327 Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
BSP318SH6327XTSA1 MOSFET N-CH 60V 2.6A
BSP318SL6327HTSA1 MOSFET N-CH 60V 2.6A SOT-223
BSP317PE6327 MOSFET P-CH 250V 0.43A SOT223
BSP317PE6327T MOSFET P-CH 250V 0.43A SOT223
BSP320S E6327 MOSFET N-CH 60V 2.9A SOT-223
BSP320S E6433 MOSFET N-CH 60V 2.9A SOT-223
BSP320SH6327 60V,120m,2.9A,N-Ch Small-Signal MOSFET
BSP316PL6327XT New and Original
BSP316S New and Original
BSP318 , TEA1795T/N1 , B New and Original
BSP318S L6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318S-E6327 INSTOCK
BSP318SE6327 MOSFET N-Ch 60V 2.6A SOT-223-3
BSP318SL6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP319P New and Original
BSP31T/R New and Original
BSP31TA Bipolar Transistors - BJT
BSP32 Transistor: N-MOSFET, unipolar, 60V, 2.9A, 1.8W, SOT223
BSP320 , TEA1892ATS/1X , New and Original
BSP320S L6327 , TEA1892T New and Original
BSP320S,L6327 New and Original
BSP320S-E6433 New and Original
BSP320SE6327 New and Original
BSP320S L6433 IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3
BSP316PL6327 Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP317PL6327 Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP317PL6327)
BSP317 MOSFET Transistor, P-Channel, SOT-223
BSP317P New and Original
BSP318 New and Original
BSP318S MOSFET, N CHANNEL, 60V, 2.6A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.07ohm, Rds(on) Test Voltage Vgs:4.5V,
BSP318SH6327 Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP319 New and Original
BSP319S New and Original
BSP320 New and Original
BSP320S New and Original
BSP320S(L6327) New and Original
BSP320S L6327 IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3
Nexperia
Nexperia
BSP32,115 Bipolar Transistors - BJT TRANS MED PWR TAPE-7
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