PartNumber | BSP318S H6327 | BSP318SH6327XTSA1 | BSP318S E6327 |
Description | MOSFET N-Ch 60V 2.6A SOT-223-3 | MOSFET N-Ch 60V 2.6A SOT-223-3 | MOSFET N-CH 60V 2.6A SOT-223 |
Manufacturer | Infineon | Infineon | INFINEON |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | MOSFET (Metal Oxide) |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-SOT-223-4 | SOT-223-4 | TO-261-4, TO-261AA |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 2.6 A | 2.6 A | - |
Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 14 nC | 14 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.8 W | 1.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Tape & Reel (TR) |
Height | 1.6 mm | 1.6 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | BSP318 | BSP318 | SIPMOS |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.5 mm | 3.5 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 2.4 S | 2.4 S | - |
Fall Time | 15 ns | 15 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 20 ns | 20 ns | - |
Typical Turn On Delay Time | 12 ns | 12 ns | - |
Part # Aliases | BSP318SH6327XTSA1 SP001058838 | BSP318S H6327 SP001058838 | - |
Unit Weight | 0.003951 oz | 0.003951 oz | - |
Part Status | - | - | Obsolete |
FET Type | - | - | N-Channel |
Drain to Source Voltage (Vdss) | - | - | 60V |
Current Continuous Drain (Id) @ 25°C | - | - | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - | - | 4.5V, 10V |
Vgs(th) (Max) @ Id | - | - | 2V @ 20A |
Gate Charge (Qg) (Max) @ Vgs | - | - | 20nC @ 10V |
Vgs (Max) | - | - | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - | - | 380pF @ 25V |
FET Feature | - | - | - |
Power Dissipation (Max) | - | - | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | - | - | 90 mOhm @ 2.6A, 10V |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | PG-SOT223-4 |