BSZ

BSZ0503NSIATMA1 vs BSZ0506NSATMA1 vs BSZ050N03LS G

 
PartNumberBSZ0503NSIATMA1BSZ0506NSATMA1BSZ050N03LS G
DescriptionMOSFET LV POWER MOSMOSFET LV POWER MOSMOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSDSON-8PG-TSDSON-8TSDSON-8
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm1.1 mm
Length3.3 mm3.3 mm3.3 mm
SeriesOptiMOS 5OptiMOS 5OptiMOS 3
Width3.3 mm3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity500050005000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesBSZ0503NSI SP001288156BSZ0506NS SP001281636BSZ050N03LSGATMA1 BSZ5N3LSGXT SP000304139
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-30 V30 V
Id Continuous Drain Current-40 A40 A
Rds On Drain Source Resistance-4.4 mOhms4.2 mOhms
Vgs th Gate Source Threshold Voltage-1.2 V1 V
Vgs Gate Source Voltage-10 V20 V
Qg Gate Charge-11 nC35 nC
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-27 W50 W
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Transistor Type-1 N-Channel1 N-Channel
Forward Transconductance Min-49 S38 S
Fall Time-2 ns3.6 ns
Rise Time-2.4 ns4 ns
Typical Turn Off Delay Time-13 ns21 ns
Typical Turn On Delay Time-2.3 ns5.2 ns
Unit Weight-0.001212 oz-
  • Start with
  • BSZ 334
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ063N04LS6ATMA1 MOSFET 40V Mosfet 6,3mOhm, S3O8MOSFET, Power MOSFET
BSZ0589NSATMA1 MOSFET
BSZ058N03LSGATMA1 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ060NE2LSATMA1 MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSZ065N03LS MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ058N03LS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ058N03MSGXT MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ0506NSATMA1 MOSFET LV POWER MOS
BSZ050N03LS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ058N03MS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ050N03MS G MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ050N03LSGATMA1 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ0506NSATMA1 MOSFET N-CH 30V 15A 8TSDSON
BSZ050N03LSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ050N03MSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ058N03LSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ058N03MSGATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ060NE2LSATMA1 MOSFET N-CH 25V 12A TSDSON-8
BSZ0503NSIATMA1 MOSFET N-CH 30V 20A 8SON
BSZ0589NSATMA1 MOSFET N-CHANNEL 30V 17A 8TDSON
Infineon Technologies
Infineon Technologies
BSZ050N03MSGATMA1 MOSFET LV POWER MOS
BSZ058N03MSGXT MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ0506NS MOSFETs
BSZ0506NS .. New and Original
BSZ050N030LSG New and Original
BSZ050N03LS New and Original
BSZ050N03LS G Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP
BSZ050N03LSG New and Original
BSZ050N03LSGXT New and Original
BSZ050N03M New and Original
BSZ050N03MS New and Original
BSZ050N03MS-G New and Original
BSZ050N03MSG Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSZ058N03L New and Original
BSZ058N03LS New and Original
BSZ058N03LSG 40 A, 30 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET
BSZ058N03MSG Trans MOSFET N-CH 30V 14A 8-Pin TSDSON T/R (Alt: BSZ058N03MS G)
BSZ058N03MSG QFN8 New and Original
BSZ058N03MSGATMA1 , TFZV New and Original
BSZ058N03S G New and Original
BSZ060NE2LS Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R
BSZ060NE2LSG New and Original
BSZ065N03L New and Original
BSZ050N03LSGATMA1-CUT TAPE New and Original
BSZ058N03LSGATMA1-CUT TAPE New and Original
BSZ060NE2LSATMA1-CUT TAPE New and Original
BSZ060NE2LS G New and Original
BSZ050N03MS G IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSZ058N03LS G IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSZ058N03MS G IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
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