PartNumber | BSZ065N06LS5ATMA1 | BSZ067N06LS3 G | BSZ065N03LSATMA1 |
Description | MOSFET MV POWER MOS | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | 1.1 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSZ065N06LS5 SP001385612 | BSZ067N06LS3GATMA1 BSZ67N6LS3GXT SP000451080 | BSZ065N03LS BSZ65N3LSXT SP000799084 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 30 V |
Id Continuous Drain Current | - | 20 A | 40 A |
Rds On Drain Source Resistance | - | 5.3 mOhms | 5.4 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 67 nC | 13 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 69 W | 26 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | OptiMOS | OptiMOS |
Series | - | OptiMOS 3 | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 25 S | 34 S |
Fall Time | - | 7 ns | 2.4 ns |
Rise Time | - | 26 ns | 3.4 ns |
Typical Turn Off Delay Time | - | 37 ns | 12 ns |
Typical Turn On Delay Time | - | 15 ns | 2.5 ns |
Unit Weight | - | 0.003527 oz | - |