BSZ065N03LSATMA1

BSZ065N03LSATMA1
Mfr. #:
BSZ065N03LSATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ065N03LSATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSZ065N03LSATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
5.4 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
26 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
1.1 mm
Length:
3.3 mm
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
34 S
Fall Time:
2.4 ns
Product Type:
MOSFET
Rise Time:
3.4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
12 ns
Typical Turn-On Delay Time:
2.5 ns
Part # Aliases:
BSZ065N03LS BSZ65N3LSXT SP000799084
Tags
BSZ065N03LS, BSZ065N03, BSZ065, BSZ06, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.5 mOhm 10 nC OptiMOS™ Power Mosfet - TSDSON-8
*** Source Electronics
MOSFET N-CH 30V 12A TSDSON-8 / Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(On):0.0054Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: Yes
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Part # Mfg. Description Stock Price
BSZ065N03LSATMA1
DISTI # V72:2272_06390880
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
4900
  • 3000:$0.3086
  • 1000:$0.3187
  • 500:$0.3439
  • 250:$0.3821
  • 100:$0.3973
  • 25:$0.6008
  • 10:$0.6674
  • 1:$0.8010
BSZ065N03LSATMA1
DISTI # V36:1790_06390880
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.2424
  • 2500000:$0.2426
  • 500000:$0.2567
  • 50000:$0.2797
  • 5000:$0.2835
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
23886In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
23886In Stock
  • 1000:$0.3461
  • 500:$0.4326
  • 100:$0.5472
  • 10:$0.7140
  • 1:$0.8100
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 12A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
15000In Stock
  • 25000:$0.2660
  • 10000:$0.2730
  • 5000:$0.2835
BSZ065N03LSATMA1
DISTI # 33156665
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
RoHS: Compliant
4900
  • 32:$0.8010
BSZ065N03LSATMA1
DISTI # BSZ065N03LSATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ065N03LSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.2029
  • 30000:$0.2059
  • 20000:$0.2139
  • 10000:$0.2219
  • 5000:$0.2299
BSZ065N03LSATMA1
DISTI # SP000799084
Infineon Technologies AGTrans MOSFET N-CH 30V 12A 8-Pin TSDSON T/R (Alt: SP000799084)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.1889
  • 30000:€0.2039
  • 20000:€0.2209
  • 10000:€0.2409
  • 5000:€0.2939
BSZ065N03LSATMA1.
DISTI # 29AC2880
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:26W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 50000:$0.2030
  • 30000:$0.2060
  • 20000:$0.2140
  • 10000:$0.2220
  • 1:$0.2300
BSZ065N03LS
DISTI # 726-BSZ065N03LS
Infineon Technologies AGMOSFET N-Ch 30V 40A TDSON-8 OptiMOS
RoHS: Compliant
7098
  • 1:$0.7400
  • 10:$0.6200
  • 100:$0.4000
  • 1000:$0.3200
  • 5000:$0.2710
BSZ065N03LSATMA1
DISTI # 726-BSZ065N03LSATMA1
Infineon Technologies AGMOSFET N-Ch 30V 40A TDSON-8 OptiMOS
RoHS: Compliant
4700
  • 1:$0.7400
  • 10:$0.6200
  • 100:$0.4000
  • 1000:$0.3200
  • 5000:$0.2710
  • 10000:$0.2610
  • 25000:$0.2500
BSZ065N03LSATMA1
DISTI # 9064331P
Infineon Technologies AGMOSFET N-CHANNEL 30V 12A OPTIMOS TSDSON8, RL5360
  • 2500:£0.2300
  • 1000:£0.2400
  • 500:£0.2700
  • 100:£0.3000
BSZ065N03LSATMA1
DISTI # 2480783
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
0
  • 5000:$0.4170
  • 1000:$0.4920
  • 100:$0.6160
  • 10:$0.9530
  • 1:$1.1500
BSZ065N03LSATMA1
DISTI # 2480783RL
Infineon Technologies AGMOSFET, N-CH, 30V, 40A, TSDSON-8
RoHS: Compliant
0
  • 5000:$0.4170
  • 1000:$0.4920
  • 100:$0.6160
  • 10:$0.9530
  • 1:$1.1500
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Availability
Stock:
Available
On Order:
1987
Enter Quantity:
Current price of BSZ065N03LSATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.74
$0.74
10
$0.62
$6.20
100
$0.40
$40.00
1000
$0.32
$320.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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