PartNumber | BSZ063N04LS6ATMA1 | BSZ060NE2LSATMA1 | BSZ065N03LS |
Description | MOSFET 40V Mosfet 6,3mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PQFN-8 | PG-TSDSON-8 | TSDSON-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 25 V | 30 V |
Rds On Drain Source Resistance | 6.3 mOhms | 6 mOhms | 6.5 mOhms |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Series | BSZ0xx | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Technology | - | Si | Si |
Id Continuous Drain Current | - | 40 A | 40 A |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Qg Gate Charge | - | 9.1 nC | 10 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 26 W | 26 W |
Height | - | 1.1 mm | 1.1 mm |
Length | - | 3.3 mm | 3.3 mm |
Width | - | 3.3 mm | 3.3 mm |
Forward Transconductance Min | - | 34 S | 34 S |
Fall Time | - | 1.8 ns | 2.4 ns |
Rise Time | - | 2.2 ns | 3.4 ns |
Typical Turn Off Delay Time | - | 11 ns | 12 ns |
Typical Turn On Delay Time | - | 2.5 ns | 2.5 ns |
Part # Aliases | - | BSZ060NE2LS BSZ6NE2LSXT SP000776122 | BSZ065N03LSATMA1 BSZ65N3LSXT SP000799084 |
Unit Weight | - | 0.001245 oz | 0.003527 oz |