BSZ076N06NS3 G

Mfr. #:: BSZ076N06NS3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ076N06NS3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: BSZ076N06NS3 G more Information

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Single

Series: OptiMOS 3

Packaging: Reel

Part-Aliases: BSZ076N06NS3GATMA1 BSZ076N06NS3GXT SP000454420

Mounting-Style: SMD/SMT

Tradename: OptiMOS

Package-Case: TDSON-8

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 69 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 5 ns

Rise-Time: 40 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuous-Drain-Current: 20 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 7.6 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 20 ns

Typical-Turn-On-Delay-Time: 15 ns

Qg-Gate-Charge: 37 nC

Forward-Transconductance-Min: 39 S 20 S

Channel-Mode: Enhancement

Tags: BSZ076, BSZ07, BSZ0, BSZ

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

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BSZ076N06NS3 G More Information

CoolMOS™ N-Channel MOSFETs: Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Market price

Part #	Mfg.	Description	Stock	Price
BSZ076N06NS3GATMA1 DISTI # V72:2272_06384428	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	3000:$0.5041 1000:$0.5094 500:$0.6512 250:$0.7441 100:$0.7518 25:$0.9817 10:$1.0907 1:$1.2841
BSZ076N06NS3GATMA1 DISTI # V36:1790_06384428	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	0
BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call	5000:$0.5242
BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 20A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSZ076N06NS3GATMA1 DISTI # 33139496	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	3000:$0.5041 1000:$0.5094 500:$0.6512 250:$0.7441 100:$0.7518 25:$0.9817 14:$0.9916
BSZ076N06NS3GXT DISTI # BSZ076N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.4549 30000:$0.4629 20000:$0.4789 10000:$0.4969 5000:$0.5159
BSZ076N06NS3GATMA1 DISTI # BSZ076N06NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Bulk (Alt: BSZ076N06NS3GATMA1) Min Qty: 782 Container: Bulk	Americas - 0	7820:$0.4059 3910:$0.4129 2346:$0.4279 1564:$0.4439 782:$0.4609
BSZ076N06NS3GATMA1 DISTI # SP000454420	Infineon Technologies AG	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R (Alt: SP000454420) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.4169 30000:€0.4489 20000:€0.4869 10000:€0.5309 5000:€0.6489
BSZ076N06NS3GATMA1 DISTI # 47W3362	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	8603	1000:$0.5430 500:$0.6880 100:$0.7790 10:$1.0100 1:$1.1800
BSZ076N06NS3 G DISTI # 726-BSZ076N06NS3G	Infineon Technologies AG	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 RoHS: Compliant	0
BSZ076N06NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	16557	1000:$0.4300 500:$0.4600 100:$0.4800 25:$0.5000 1:$0.5300
BSZ076N06NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	2600	1000:$0.4200 500:$0.4400 100:$0.4600 25:$0.4800 1:$0.5200
BSZ076N06NS3G	Infineon Technologies AG	* FREE SHIPPING ORDERS OVER $100 * 14A, 60V, 0.0076OHM, N-CHANNEL, SI, POWER, MOSFET	3244	2134:$0.3300 477:$0.3750 1:$1.2000
BSZ076N06NS3GATMA1	Infineon Technologies AG		2809
BSZ076N06NS3G	Infineon Technologies AG		5877
BSZ076N06NS3GATMA1 DISTI # 2212829	Infineon Technologies AG	MOSFET, N-CH, 60V, 20A, 8TSDSON RoHS: Compliant	8603	100:$1.1900 10:$1.5500 1:$1.8000
BSZ076N06NS3GATMA1 DISTI # 2212829	Infineon Technologies AG	MOSFET, N-CH, 60V, 20A, 8TSDSON	8618	500:£0.5910 250:£0.6300 100:£0.6680 25:£0.8670 5:£1.0700
BSZ076N06NS3G	Infineon Technologies AG	Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 5000

Related products

Image	Part #	Description
	Mfr.#: BSZ076N06NS3 G OMO.#: OMO-BSZ076N06NS3-G	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
	Mfr.#: BSZ076N06NS3GATMA1 OMO.#: OMO-BSZ076N06NS3GATMA1	MOSFET MV POWER MOS
	Mfr.#: BSZ076N06NS3GXT OMO.#: OMO-BSZ076N06NS3GXT-1190	Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
	Mfr.#: BSZ076N06NS3G OMO.#: OMO-BSZ076N06NS3G-1190	New and Original
	Mfr.#: BSZ076N06NS3GATMA1 OMO.#: OMO-BSZ076N06NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 20A TSDSON-8
	Mfr.#: BSZ076N06NS3 G OMO.#: OMO-BSZ076N06NS3-G-128	MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3

Availability

Stock:: Available
On Order:: 5000
Enter Quantity:

Current price of BSZ076N06NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes