PartNumber | BSZ070N08LS5ATMA1 | BSZ075N08NS5ATMA1 | BSZ0703LSATMA1 |
Description | MOSFET | MOSFET N-Ch 80V 40A TSDSON-8 | MOSFET N-CH 8TDSON |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | TSDSON-8 | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | OptiMOS 5 | OptiMOS 5 | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | BSZ070N08LS5 SP001352992 | BSZ075N08NS5 SP001132454 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 80 V | - |
Id Continuous Drain Current | - | 40 A | - |
Rds On Drain Source Resistance | - | 10.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 24 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 69 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 21 S | - |
Fall Time | - | 4 ns | - |
Rise Time | - | 4 ns | - |
Typical Turn Off Delay Time | - | 19 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Unit Weight | - | 0.005503 oz | - |