BSZ07

BSZ070N08LS5ATMA1 vs BSZ075N08NS5ATMA1 vs BSZ0703LSATMA1

 
PartNumberBSZ070N08LS5ATMA1BSZ075N08NS5ATMA1BSZ0703LSATMA1
DescriptionMOSFETMOSFET N-Ch 80V 40A TSDSON-8MOSFET N-CH 8TDSON
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 5OptiMOS 5-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesBSZ070N08LS5 SP001352992BSZ075N08NS5 SP001132454-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-80 V-
Id Continuous Drain Current-40 A-
Rds On Drain Source Resistance-10.2 mOhms-
Vgs th Gate Source Threshold Voltage-2.2 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-24 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-69 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Forward Transconductance Min-21 S-
Fall Time-4 ns-
Rise Time-4 ns-
Typical Turn Off Delay Time-19 ns-
Typical Turn On Delay Time-10 ns-
Unit Weight-0.005503 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ070N08LS5ATMA1 MOSFET
BSZ075N08NS5ATMA1 MOSFET N-Ch 80V 40A TSDSON-8
BSZ076N06NS3 G MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
BSZ070N08LS5ATMA1 MV POWER MOS
BSZ0703LSATMA1 MOSFET N-CH 8TDSON
BSZ076N06NS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
BSZ075N08NS5ATMA1 RF Bipolar Transistors MOSFET N-Ch 80V 40A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ076N06NS3GATMA1 MOSFET MV POWER MOS
BSZ076N06NS3GXT Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
BSZ070N08LS5 SP001352992 OPTIMOS 5 POWER MOSFETS (Alt: BSZ070N08LS5)
BSZ076N06NS3G New and Original
BSZ076N06NS3 G MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
Top