BSZ076

BSZ076N06NS3 G vs BSZ076N06NS3GATMA1 vs BSZ076N06NS3G

 
PartNumberBSZ076N06NS3 GBSZ076N06NS3GATMA1BSZ076N06NS3G
DescriptionMOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance7.6 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation69 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
TypeOptiMOS 3 Power-Transistor--
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min39 S, 20 S--
Fall Time5 ns--
Product TypeMOSFETMOSFET-
Rise Time40 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSZ076N06NS3GATMA1 BSZ76N6NS3GXT SP000454420BSZ076N06NS3 BSZ76N6NS3GXT G SP000454420-
Unit Weight0.002681 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ076N06NS3 G MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
BSZ076N06NS3GATMA1 MOSFET N-CH 60V 20A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ076N06NS3GATMA1 MOSFET MV POWER MOS
BSZ076N06NS3GXT Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ076N06NS3GATMA1)
BSZ076N06NS3G New and Original
BSZ076N06NS3 G MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3
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