PartNumber | BSZ013NE2LS5IATMA1 | BSZ011NE2LS5IATMA1 | BSZ010NE2LS5ATMA1 |
Description | MOSFET LV POWER MOS | MOSFET 25V Mosfet 1,1mOhm, PQFN 3x3 | MOSFET 25V Mosfet 1,0mOhm, PQFN 3x3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSDSON-8 | TSDSON-8 FL | TSDSON-8 FL |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Series | OptiMOS 5 | OptiMOS | OptiMOS |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 5000 | 5000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSZ013NE2LS5I SP001288148 | BSZ011NE2LS5I SP001730810 | BSZ010NE2LS5 SP002103858 |
Number of Channels | - | 1 Channel | 1 Channel |
Id Continuous Drain Current | - | 40 A | 40 A |
Rds On Drain Source Resistance | - | 1.1 mOhms | 1 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
Vgs Gate Source Voltage | - | 16 V | 16 V |
Qg Gate Charge | - | 17 nC | 21 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 69 W | 69 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 3 ns | 7.2 ns |
Rise Time | - | 4 ns | 6 ns |
Typical Turn Off Delay Time | - | 26 ns | 19.3 ns |
Typical Turn On Delay Time | - | 5 ns | 12.6 ns |