BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1
Mfr. #:
BSZ011NE2LS5IATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 25V Mosfet 1,1mOhm, PQFN 3x3
Lifecycle:
New from this manufacturer.
Datasheet:
BSZ011NE2LS5IATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSZ011NE2LS5IATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSDSON-8 FL
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
1.1 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Vgs - Gate-Source Voltage:
16 V
Qg - Gate Charge:
17 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
69 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
OptiMOS
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Fall Time:
3 ns
Product Type:
MOSFET
Rise Time:
4 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
5 ns
Part # Aliases:
BSZ011NE2LS5I SP001730810
Tags
BSZ01, BSZ0, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Image Part # Description
BSZ011NE2LS5IATMA1

Mfr.#: BSZ011NE2LS5IATMA1

OMO.#: OMO-BSZ011NE2LS5IATMA1

MOSFET 25V Mosfet 1,1mOhm, PQFN 3x3
Availability
Stock:
250
On Order:
2233
Enter Quantity:
Current price of BSZ011NE2LS5IATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.08
$2.08
10
$1.77
$17.70
100
$1.41
$141.00
500
$1.23
$615.00
1000
$1.02
$1 020.00
2500
$0.96
$2 390.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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