PartNumber | BSZ018N04LS6ATMA1 | BSZ018NE2LS | BSZ018NE2LSATMA1 |
Description | MOSFET 40V Mosfet 1,8mOhm, S3O8MOSFET, Power MOSFET | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | MOSFET N-CH 25V 23A TSDSON-8 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PQFN-8 | TSDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 25 V | - |
Rds On Drain Source Resistance | 1.8 mOhms | 1.8 mOhms | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Series | BSZ0xx | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Technology | - | Si | - |
Id Continuous Drain Current | - | 40 A | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Qg Gate Charge | - | 29 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 69 W | - |
Height | - | 1.1 mm | - |
Length | - | 3.3 mm | - |
Width | - | 3.3 mm | - |
Forward Transconductance Min | - | 140 S | - |
Fall Time | - | 3.4 ns | - |
Rise Time | - | 4.4 ns | - |
Typical Turn Off Delay Time | - | 26 ns | - |
Typical Turn On Delay Time | - | 5.5 ns | - |
Part # Aliases | - | BSZ018NE2LSATMA1 BSZ18NE2LSXT SP000756338 | - |