BSZ018

BSZ018N04LS6ATMA1 vs BSZ018NE2LS vs BSZ018NE2LSATMA1

 
PartNumberBSZ018N04LS6ATMA1BSZ018NE2LSBSZ018NE2LSATMA1
DescriptionMOSFET 40V Mosfet 1,8mOhm, S3O8MOSFET, Power MOSFETMOSFET N-Ch 25V 40A TDSON-8 OptiMOSMOSFET N-CH 25V 23A TSDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V25 V-
Rds On Drain Source Resistance1.8 mOhms1.8 mOhms-
Vgs Gate Source Voltage10 V20 V-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
SeriesBSZ0xx--
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Technology-Si-
Id Continuous Drain Current-40 A-
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-29 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-69 W-
Height-1.1 mm-
Length-3.3 mm-
Width-3.3 mm-
Forward Transconductance Min-140 S-
Fall Time-3.4 ns-
Rise Time-4.4 ns-
Typical Turn Off Delay Time-26 ns-
Typical Turn On Delay Time-5.5 ns-
Part # Aliases-BSZ018NE2LSATMA1 BSZ18NE2LSXT SP000756338-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ018N04LS6ATMA1 MOSFET 40V Mosfet 1,8mOhm, S3O8MOSFET, Power MOSFET
BSZ018NE2LSIXT MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LS MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSZ018NE2LSATMA1 MOSFET N-CH 25V 23A TSDSON-8
BSZ018NE2LSIATMA1 MOSFET N-CH 25V 22A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ018NE2LSIATMA1 MOSFET LV POWER MOS
BSZ018NE2LS Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP (Alt: BSZ018NE2LS)
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSIXT RF Bipolar Transistors MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
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