BSZ018NE

BSZ018NE2LSI vs BSZ018NE2LS vs BSZ018NE2LSATMA1

 
PartNumberBSZ018NE2LSIBSZ018NE2LSBSZ018NE2LSATMA1
DescriptionMOSFET N-Ch 25V 40A TSDSON-8 OptiMOSMOSFET N-Ch 25V 40A TDSON-8 OptiMOSMOSFET N-CH 25V 23A TSDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance1.5 mOhms1.8 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge48 nC29 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min50 S140 S-
Fall Time3.6 ns3.4 ns-
Product TypeMOSFETMOSFET-
Rise Time4.8 ns4.4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns26 ns-
Typical Turn On Delay Time5.2 ns5.5 ns-
Part # AliasesBSZ018NE2LSIATMA1 BSZ18NE2LSIXT SP000906032BSZ018NE2LSATMA1 BSZ18NE2LSXT SP000756338-
Unit Weight0.001298 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ018NE2LSIXT MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LS MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSZ018NE2LSATMA1 MOSFET N-CH 25V 23A TSDSON-8
BSZ018NE2LSIATMA1 MOSFET N-CH 25V 22A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ018NE2LSIATMA1 MOSFET LV POWER MOS
BSZ018NE2LS Trans MOSFET N-CH 25V 23A 8-Pin TSDSON EP (Alt: BSZ018NE2LS)
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSIXT RF Bipolar Transistors MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
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