BSZ018NE2LSI

BSZ018NE2LSIXT vs BSZ018NE2LSI vs BSZ018NE2LSIATMA1

 
PartNumberBSZ018NE2LSIXTBSZ018NE2LSIBSZ018NE2LSIATMA1
DescriptionMOSFET N-Ch 25V 40A TSDSON-8 OptiMOSMOSFET N-Ch 25V 40A TSDSON-8 OptiMOSMOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSDSON-8TSDSON-8TSDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage25 V25 V25 V
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance1.5 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge48 nC48 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm1.1 mm
Length3.3 mm3.3 mm3.3 mm
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min50 S50 S-
Fall Time3.6 ns3.6 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time4.8 ns4.8 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time5.2 ns5.2 ns-
Part # AliasesBSZ018NE2LSIATMA1 SP000906032BSZ018NE2LSIATMA1 BSZ18NE2LSIXT SP000906032BSZ018NE2LSI BSZ18NE2LSIXT SP000906032
Unit Weight-0.001298 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ018NE2LSIXT MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSIATMA1 MOSFET N-CH 25V 22A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ018NE2LSIATMA1 MOSFET LV POWER MOS
BSZ018NE2LSI MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
BSZ018NE2LSIXT RF Bipolar Transistors MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
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