 | | | |
| PartNumber | BSZ035N03MS G | BSZ035N03LS G | BSZ035N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 18 A | 40 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | 2.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3M | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 94 S | - | - |
| Fall Time | 4.8 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.8 ns | 5.4 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 30 ns | - |
| Typical Turn On Delay Time | 10 ns | 7.8 ns | - |
| Part # Aliases | BSZ035N03MSGATMA1 BSZ35N3MSGXT SP000311511 | BSZ035N03LSGATMA1 BSZ35N3LSGXT SP000278809 | BSZ035N03LS BSZ35N3LSGXT G SP000278809 |
| Unit Weight | - | 0.070548 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ035N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | |
| BSZ035N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ035N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ035N03MS G | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON T/R (Alt: BSZ035N03MS G) | ||
| BSZ035N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ035N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
Infineon Technologies |
BSZ035N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSZ035N03LSG REEL | - Bulk (Alt: BSZ035N03LSG REEL) | ||
| BSZ035N03 | New and Original | ||
| BSZ035N03L | New and Original | ||
| BSZ035N03L(035N03L) | New and Original | ||
| BSZ035N03LS | New and Original | ||
| BSZ035N03LSG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ035N03M | New and Original | ||
| BSZ035N03MS | New and Original | ||
| BSZ035N03MSG | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP | ||
| BSZ035N03MSG , TFZV3.0B | New and Original |