PartNumber | BSZ060NE2LSATMA1 | BSZ060NE2LS | BSZ060NE2LS G |
Description | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R | |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TSDSON-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 9.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 26 W | - | - |
Configuration | Single | Single Quad Drain Triple Source | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 34 S | - | - |
Fall Time | 1.8 ns | 1.8 nS | - |
Product Type | MOSFET | - | - |
Rise Time | 2.2 ns | 2.2 ns | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11 ns | 11 nS | - |
Typical Turn On Delay Time | 2.5 ns | - | - |
Part # Aliases | BSZ060NE2LS BSZ6NE2LSXT SP000776122 | - | - |
Unit Weight | 0.001245 oz | - | - |
Series | - | OptiMOS | - |
Part Aliases | - | BSZ060NE2LSATMA1 BSZ060NE2LSXT SP000776122 | - |
Package Case | - | TDSON-8 | - |
Pd Power Dissipation | - | 26 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 40 A | - |
Vds Drain Source Breakdown Voltage | - | 26 V | - |
Rds On Drain Source Resistance | - | 6 mOhms | - |
Qg Gate Charge | - | 9.1 nC | - |