 |  | | |
| PartNumber | BSZ067N06LS3 G | BSZ067N06LS3 | BSZ067N06LS3G |
| Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 5.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 67 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 25 S | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 37 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | BSZ067N06LS3GATMA1 BSZ67N6LS3GXT SP000451080 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ067N06LS3GATMA1 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ067N06LS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| BSZ067N06LS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
| BSZ067N06LS3 | New and Original | ||
| BSZ067N06LS3 G | Trans MOSFET N-CH 60V 14A 8-Pin TSDSON EP T/R | ||
| BSZ067N06LS3G | New and Original |