PartNumber | BSZ097N04LSGATMA1 | BSZ097N04LS G | BSZ097N04LSG |
Description | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 0.0142OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | PG-TSDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 40 A | 40 A | - |
Rds On Drain Source Resistance | 8.1 mOhms | 14.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 24 nC | 18 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 35 W | 35 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | OptiMOS 3 | OptiMOS 3 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 24 S | 24 S | - |
Fall Time | 2.8 ns | 2.8 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 2.4 ns | 2.4 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 16 ns | 16 ns | - |
Typical Turn On Delay Time | 3.5 ns | 3.5 ns | - |
Part # Aliases | BSZ097N04LS BSZ97N4LSGXT G SP000388296 | BSZ097N04LSGATMA1 BSZ97N4LSGXT SP000388296 | - |
Unit Weight | 0.005326 oz | 0.009877 oz | - |