BSZ097N04LS G

Mfr. #:: BSZ097N04LS G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: BSZ097N04LS G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: BSZ097N04LS G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-TSDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 40 A

Rds On - Drain-Source Resistance:: 14.2 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 18 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 35 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.1 mm

Length:: 3.3 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 24 S

Fall Time:: 2.8 ns

Product Type:: MOSFET

Rise Time:: 2.4 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 16 ns

Typical Turn-On Delay Time:: 3.5 ns

Part # Aliases:: BSZ097N04LSGATMA1 BSZ97N4LSGXT SP000388296

Unit Weight:: 0.009877 oz

Tags: BSZ097N04LS, BSZ097N0, BSZ097, BSZ09, BSZ0, BSZ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ097N04LS G More Information

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Inductive Wireless Charging Solutions: Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Market price

Part #	Mfg.	Description	Stock	Price
BSZ097N04LSGATMA1 DISTI # V72:2272_06390960	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	7	1:$0.9208
BSZ097N04LSGATMA1 DISTI # V36:1790_06390960	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000:$0.2679
BSZ097N04LSGATMA1 DISTI # BSZ097N04LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 40V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	45017In Stock	1000:$0.3980 500:$0.4975 100:$0.6293 10:$0.8210 1:$0.9300
BSZ097N04LSGATMA1 DISTI # BSZ097N04LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 40V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	45017In Stock	1000:$0.3980 500:$0.4975 100:$0.6293 10:$0.8210 1:$0.9300
BSZ097N04LSGATMA1 DISTI # BSZ097N04LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 40V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	40000In Stock	25000:$0.3059 10000:$0.3140 5000:$0.3260
BSZ097N04LS G DISTI # 31290902	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP RoHS: Compliant	19356	41:$0.6187
BSZ097N04LSGATMA1 DISTI # 33368448	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.2651
BSZ097N04LSGATMA1 DISTI # SP000388296	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R (Alt: SP000388296) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 5000	50000:€0.2519 30000:€0.2709 20000:€0.2939 10000:€0.3199 5000:€0.3919
BSZ097N04LS G DISTI # BSZ097N04LS G	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R (Alt: BSZ097N04LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSZ097N04LSGATMA1 DISTI # BSZ097N04LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ097N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.2329 30000:$0.2379 20000:$0.2459 10000:$0.2549 5000:$0.2649
BSZ097N04LSGATMA1 DISTI # 60R2538	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R - Bulk (Alt: 60R2538) RoHS: Compliant Min Qty: 5 Container: Bulk	Americas - 0
BSZ097N04LSGATMA1 DISTI # 60R2538	Infineon Technologies AG	MOSFET, N CHANNEL, 40V, 40A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0081ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	10	1000:$0.4090 500:$0.4600 100:$0.5120 10:$0.7920 1:$0.9450
BSZ097N04LS G DISTI # 726-BSZ097N04LSG	Infineon Technologies AG	MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant	20929	1:$0.8500 10:$0.7130 100:$0.4600 1000:$0.3680 5000:$0.3110 10000:$0.3000 25000:$0.2880
BSZ097N04LSGATMA1 DISTI # 726-BSZ097N04LSGATMA	Infineon Technologies AG	MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant	35790	1:$0.8500 10:$0.7130 100:$0.4600 1000:$0.3680 5000:$0.3110 10000:$0.3000 25000:$0.2880
BSZ097N04LSGATMA1 DISTI # 7545367P	Infineon Technologies AG	MOSFET N-CHANNEL 40V 12A TSDSON8, RL	9945	2500:£0.2260 1250:£0.2300 250:£0.2860 50:£0.3720
BSZ097N04LSG	Infineon Technologies AG	POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 40V, 0.0142OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	4000	1145:$0.7950 613:$0.8745 1:$2.1200
BSZ097N04LS G	Infineon Technologies AG		117
BSZ097N04LSGATMA1 DISTI # BSZ097N04LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,40A,35W,PG-TSDSON-8	5000	1000:$0.3345 100:$0.3592 25:$0.4133 5:$0.4685 1:$0.5698
BSZ097N04LSG	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	3080
BSZ097N04LS G DISTI # TMOSP8698	Infineon Technologies AG	N-CH40V40A10mOhm S3O8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	5000:$0.4001 10000:$0.3772 15000:$0.3543 20000:$0.3200 25000:$0.3086
BSZ097N04LSGATMA1 DISTI # 1775501	Infineon Technologies AG	MOSFET, N CH, 40A, 40V, PG-TSDSON-8	3230	500:£0.3100 250:£0.3340 100:£0.3580 10:£0.6080 1:£0.7560
BSZ097N04LSGATMA1 DISTI # 1775501	Infineon Technologies AG	MOSFET, N CH, 40A, 40V, PG-TSDSON-8 RoHS: Compliant	3280	1000:$0.5670 100:$0.7070 10:$1.1000 1:$1.3100
BSZ097N04LS G	Infineon Technologies AG	RoHS(ship within 1day)	5000	1:$1.4700 10:$1.1000 50:$0.7300 100:$0.5900 500:$0.5500 1000:$0.5300
BSZ097N04LS G DISTI # C1S322000087381	Infineon Technologies AG	Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R RoHS: Compliant	19356	1000:$0.3120 100:$0.3290 50:$0.3450 10:$0.4950

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Availability

Stock:: 23
On Order:: 2006
Enter Quantity:

Current price of BSZ097N04LS G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.85~~; ~~$0.85~~

10: ~~$0.71~~; ~~$7.13~~

100: ~~$0.46~~; ~~$46.00~~

1000: ~~$0.37~~; ~~$368.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BSZ097N04LS G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes