PartNumber | BSZ110N06NS3 G | BSZ110N08NS5ATMA1 | BSZ110N06NS3GATMA1 |
Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 80V 40A TSDSON-8 | MOSFET MV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 80 V | - |
Id Continuous Drain Current | 20 A | 40 A | - |
Rds On Drain Source Resistance | 11 mOhms | 11 mOhms | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.1 W | 50 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1.1 mm | 1.1 mm |
Length | 3.3 mm | 3.3 mm | 3.3 mm |
Series | OptiMOS 3 | OptiMOS 5 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | 3.3 mm | 3.3 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6 ns | 3 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 77 ns | 3 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | 15 ns | - |
Typical Turn On Delay Time | 10 ns | 9 ns | - |
Part # Aliases | BSZ110N06NS3GATMA1 BSZ11N6NS3GXT SP000453676 | BSZ110N08NS5 SP001154280 | BSZ110N06NS3 BSZ11N6NS3GXT G SP000453676 |
Unit Weight | 0.003210 oz | 0.005503 oz | - |
Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
Qg Gate Charge | - | 15 nC | - |
Forward Transconductance Min | - | 17 S | - |