PartNumber | BSZ120P03NS3GATMA1 | BSZ120P03NS3G | BSZ120P03NS3GATMA1 , TG1 |
Description | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSDSON-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 9 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 45 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 52 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Series | BSZ120P03 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 22 S | - | - |
Fall Time | 5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 11 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 23 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Part # Aliases | BSZ120P03NS3 BSZ12P3NS3GXT G SP000709736 | - | - |
Unit Weight | 0.001404 oz | - | - |