 |  | |
| PartNumber | BSZ130N03MSGATMA1 | BSZ130N03MSG |
| Description | MOSFET LV POWER MOS | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSDSON-8 | - |
| Tradename | OptiMOS | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 3.3 mm | - |
| Width | 3.3 mm | - |
| Brand | Infineon Technologies | - |
| Product Type | MOSFET | - |
| Subcategory | MOSFETs | - |
| Part # Aliases | BSZ130N03MS BSZ13N3MSGXT G SP000313122 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ130N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ130N03MSG | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSZ130N03MSGATMA1 | MOSFET N-CH 30V 35A TSDSON-8 |