 | | | |
| PartNumber | BSZ15DC02KD H | BSZ150N10LS3 G | BSZ150N10LS3GATMA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET N-Ch 100V 40A TSDSON-8 | MOSFET N-Ch 100V 40A TSDSON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 100 V | 100 V |
| Id Continuous Drain Current | 5.1 A, 3.2 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 41 mOhms, 97 mOhms | 15 mOhms | 13 mOhms |
| Vgs th Gate Source Threshold Voltage | 800 mV, 1.4 V | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | 12 V | 10 V | 20 V |
| Qg Gate Charge | 2.8 nC, - 4.5 nC | 26 nC | 35 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 63 W | 63 W |
| Configuration | Dual | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 5.5 S, 3.4 S | 21 S | 21 S |
| Fall Time | 1.4 ns, 4.7 ns | 3.9 ns | 3.9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2 ns, 3.7 ns | 4.6 ns | 4.6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12.2 ns, 11.3 ns | 23.4 ns | 23.4 ns |
| Typical Turn On Delay Time | 4.9 ns, 7.4 ns | 8.1 ns | 8.1 ns |
| Part # Aliases | BSZ15DC02KDHXTMA1 SP000961028 | BSZ150N10LS3GATMA1 SP001002916 | BSZ150N10LS3 G SP001002916 |
| RoHS | - | Y | Y |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS 3 | OptiMOS 3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | |
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ150N10LS3 G | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ150N10LS3GATMA1 | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ150N10LS3GATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ150N10LS3 G | MOSFET N-Ch 100V 40A TSDSON-8 | ||
| BSZ150N10LS3G | Trans MOSFET N-CH 100V 8A 8-Pin TSDSON | ||
| BSZ15DC02KD | New and Original | ||
| BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ15DC02KDH | New and Original | ||
| BSZ150N10LS3GATMA1-CUT TAPE | New and Original | ||
| BSZ15DC02KDHXTMA1-CUT TAPE | New and Original |