 |  | | |
| PartNumber | BSZ165N04NS G | BSZ165N04NS | BSZ165N04NSG |
| Description | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 31 A | - | - |
| Rds On Drain Source Resistance | 13.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 12 S | - | - |
| Fall Time | 2.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 6.8 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |
| Part # Aliases | BSZ165N04NSGATMA1 BSZ165N4NSGXT SP000391523 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ165N04NS G | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | |
| BSZ165N04NSGATMA1 | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NSGATMA1 | MOSFET N-CH 40V 31A TSDSON-8 | ||
| BSZ165N04NS | New and Original | ||
| BSZ165N04NS G | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NSG | New and Original |